2023
DOI: 10.3390/electronics12112349
|View full text |Cite
|
Sign up to set email alerts
|

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

Abstract: As the manufacturing process level of semiconductor devices continues to improve, the device size gradually decreases, and the devices are affected by the single event effect more and more severely. In this paper, the physical process of single particle incident N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (NMOSFET) is simulated. By changing the particle incidence position, incidence angle, LET value, and temperature, the transient current variation with time is obtained, and the susceptibility … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
references
References 22 publications
(31 reference statements)
0
0
0
Order By: Relevance