Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD

Маrmalyuk, А. А.; Govorkov, O. I.; Petrovsky, Alexander; Nikitin, D. B.; Падалица, А. А.; Bulaev, P.V.; Budkin, I. V.; Zalevsky, Igor Dmitrievich

doi:10.1016/s0022-0248(01)01880-2

Cited by 31 publications

(11 citation statements)

References 13 publications

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“…The observed compositional grading at the interface could either result from; (a) surface segregation at the growth front during the layer growth or growth pause between SL layers [10,11], and/or (b) solid-state diffusion during the growth of subsequent layers, due to continued annealing as the structure is grown. Based on the growth rates in Table 1, the growth of 40 stages within a typical QCL active region takes~6.42 hr (including the 5 s pause time in between each layer) [12].…”

Section: Extent Of Interfacial Mixing In the Thin-motif Samplementioning

confidence: 99%

Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography

et al. 2018

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Quantum wells and barriers with precise thicknesses and abrupt composition changes at their interfaces are critical for obtaining the desired emission wavelength from quantum cascade laser devices. High-resolution X-ray diffraction and transmission electron microscopy are commonly used to calibrate and characterize the layers’ thicknesses and compositions. A complementary technique, atom probe tomography, was employed here to obtain a direct measurement of the 3-dimensional spatially-resolved compositional profile in two InxGa1−xAs/InyAl1−yAs III-V strained-layer superlattice structures, both grown at 605 °C. Fitting the measured composition profiles to solutions to Fick’s Second Law yielded an average interdiffusion coefficient of 3.5 × 10−23 m2 s−1 at 605 °C. The extent of interdiffusion into each layer determined for these specific superlattices was 0.55 nm on average. The results suggest that quaternary active layers will form, rather than the intended ternary compounds, in structures with thicknesses and growth protocols that are typically designed for quantum cascade laser devices.

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Section: Extent Of Interfacial Mixing In the Thin-motif Samplementioning

confidence: 99%

Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography

et al. 2018

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“…It means, that the alloy ordering, the surface segregation and In desorption are similar in both cases. Marmalyuk et al [10] reported the temperature-saturation limit of the desorption effectivity at 700 1C. The lower PL intensity of structures grown at lower temperatures can be explained by higher impurity concentration, particularly that of oxygen or poorer alloy ordering.…”

Section: Article In Pressmentioning

confidence: 99%

“…The problem of optimization of growth conditions is still open, despite many experiments devoted to investigation of InGaAs QW quality dependence on alloy ordering and interface abruptness [5][6][7][8]. The difficulty comes from the fact that a number of different phenomena, both physical and technological, require tuning during the epitaxial process [9,10]. Moreover, the complications partly arise from the fact, that the thermodynamic and kinetic conditions in the reactor chamber strongly affect the composition uniformity and the interface sharpness.…”

Section: Introductionmentioning

confidence: 99%

The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

Jasik

Wnuk

Wójcik-Jedlińska

et al. 2008

Journal of Crystal Growth

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“…AlAs has been chosen to reduce surface segregation of indium atoms at QW interfaces frequently observed in InGaAs/GaAs structures. 5 The electronic band structure of such InGaAs QWs heteroepitaxial growth is known to be affected by many factors. First, indium quantity governs band gap energy by following the Vergard's law.…”

Section: Introductionmentioning

confidence: 99%

Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques

Roque

Beainy

Rochat

et al. 2018

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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et al.. Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques.The electronic and structural properties of an In x Ga 1Àx As quantum well (QW) stacking between AlAs barriers grown on 300 mm (001) silicon substrate by metalorganic chemical vapor deposition were investigated. Nanometer scale and spatially colocalized characterization combining low temperature cathodoluminescence (CL) and scanning transmission electron microscopy was performed. The combined interpretation of luminescence and strain measurement provides an exhaustive landscape of such complex sample. Particularly, CL analysis highlights luminescent regions characterized by quasicircular shapes and a peculiar optical emission consisting of a double peak. The characterizations provide a comprehensive analysis of these specific luminescence features. These luminescent regions, detected all over the sample, seem to be correlated to local increases in carbon and indium content in AlAs barriers and in the InGaAs QW, respectively, induced by local strain variations. These modifications alter InGaAs QW properties and thus its optical emission efficiency. Published by the AVS. https://doi.

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Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD

Cited by 31 publications

References 13 publications

Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography

Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography

The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques

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