Investigation of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors for logic application

Tsai, Jung‐Hui

doi:10.1016/j.spmi.2013.11.011

Cited by 2 publications

(2 citation statements)

References 15 publications

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“…and spectroscopy attract more interest [12]. InP and GaAs substrates have been commonly used for the growth of In x Ga 1−x As films [13][14][15]. However, the lattice mismatch between the epitaxial layers and substrates strongly affects the performance of the In 0.82 Ga 0.…”

Section: Introductionmentioning

confidence: 99%

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

et al. 2017

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Abstract:In order to reduce the dislocation density and improve the performance of high indium content In 0.82 Ga 0.18 As films, the design of double buffer layers has been introduced into the In 0.82 Ga 0.18 As/InP heterostructure. Compared with other buffer layer structures, we introduce an InP thin layer, which is the same as the substrate, into the In 0.82 Ga 0.18 As/InP heterostructure. The epitaxial layers and buffer layers were grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method. In this study, the surface morphology and microstructures of the heterostructure were investigated by SEM, AFM, XRD and TEM. The residual strains of the In 0.82 Ga 0.18 As epitaxial layer in different samples were studied by Raman spectroscopy. The residual strain of the In 0.82 Ga 0.18 As epitaxial layer was decreased by designing double buffer layers which included an InP layer; as a result, dislocations in the epitaxial layer were effectively suppressed since the dislocation density was notably reduced. Moreover, the performance of In 0.82 Ga 0.18 As films was investigated using the Hall test, and the results are in line with our expectations. By comparing different buffer layer structures, we explained the mechanism of dislocation density reduction by using double buffer layers, which included a thin InP layer.

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Section: Introductionmentioning

confidence: 99%

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

et al. 2017

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“…In addition, the monolithic integration of complementary FETs by combining n-channel and p-channel transistors in the same substrate could reduce the fabrication complexity and to implement inverters in logic circuit applications. 10,11 On the other hand, hydrogen has been considered to be an energy carrier and is generally used in chemical industry, semiconductor fabrication, medical treatment, and hydrogen-fueled vehicles. In particular, hydrogen sensors based on III-V compound semiconductor devices are expected to have high sensitivity for the high electron mobility.…”

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confidence: 99%

Hydrogen Sensing Characteristics of AlGaInP/InGaAs Complementary Co-Integrated Pseudomorphic Doping-Channel Field-Effect Transistors

Tsai¹,

Niu²,

Huang³

2018

ECS J. Solid State Sci. Technol.

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In this article, the hydrogen sensing device and logic characteristics of the Al 0.25 Ga 0.25 In 0.5 P/In 0.1 Ga 0.9 As complementary cointegrated pseudomorphic doping-channel field-effect transistors are demonstrated. Due to the existence of a relatively large conduction (valence) band discontinuity at Al 0.25 Ga 0.25 In 0.5 P/In 0.1 Ga 0.9 As heterojunction and the employment of a small energy-gap In 0.1 Ga 0.9 As channel layer, it could provide a high gate barrier height to avoid electrons (holes) injection form channel into gate region in the studied n-channel (p-channel) device. With respect to the n-channel (p-channel) transistor under hydrogen ambient, hydrogen molecules are adsorbed and dissociated on the Pd catalytic metal surface, followed by rapid diffusion of hydrogen atoms into the MS interface where the dipoles are formed to lower (elevate) the gate barrier height and enhance (decrease) the drain current. In the n-channel (p-channel) device, the threshold voltages at drain current of 0.1 mA/mm are of 0.67 (0.05) and 0.38 (−0.26) V in air and at hydrogen concentration of 9800 ppm, respectively. As hydrogen is detected, the characteristics of inverters shift left obviously, and the V OH and V IH values are decreased.

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Investigation of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors for logic application

Cited by 2 publications

References 15 publications

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure

Hydrogen Sensing Characteristics of AlGaInP/InGaAs Complementary Co-Integrated Pseudomorphic Doping-Channel Field-Effect Transistors

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