Investigation of intrinsic defect magnetic properties in wurtzite ZnO materials

Федоров, А. С.; Visotin, Maxim A.; Kholtobina, Anastasia S.; Кузубов, А. А.; Mikhaleva, Natalia S.; Hsu, Hua-Shu

doi:10.1016/j.jmmm.2016.12.130

Cited by 20 publications

(8 citation statements)

References 32 publications

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“…Hwang et al [29] and Fedorov et al [5], associate the green emission band to undoped ZnO with the presence of VO and VZn [27], [30] that introduces deep acceptors in the Eg. Green luminescence is because of the electronic transition between shallow donors and deep acceptors.…”

Section: Photoluminescence (Pl)mentioning

confidence: 99%

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Photoluminescent Enhancement by Effect of Incorporation Nickel in ZnO Films Grown

Gutiérrez

Díaz-Becerril

Garcı́a-Salgado

et al. 2021

EJENG

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Microstructured films of undoped zinc oxide (ZnO) and ZnO doped with nickel (ZnO:Ni) were grown by hot filament chemical vapor deposition (HFCVD) technique on Si (100) substrates at 500 °C. Pellets of ZnO and ZnO:NiO as oxidant agenst were used. A shift to the right around 0.17 degree of the X-Ray Diffraction pattern of the ZnO:Ni film was observed with respect to undoped ZnO films. Morphologically by Scanning Electron Microscopy was noticed a Core-Shell type growth in ZnO undoped and a nanostructured type (Nano-wire) in ZnO doped with Ni. Photoluminescence measurements showed an increase in the intensity of the green emission band of ZnO:Ni. It was attributed to defects of oxygen vacancies (VO), zinc vacancies (VZn), zinc interstitials (Zni), oxygen interstitials (Oi), and oxygen vacancies complex (VO complex) in the structure of the film. The incorporation of Ni atoms in the ZnO structure stresses the crystal lattice, leaving behind a large number of surface defects that increase the emission of PL.

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Section: Photoluminescence (Pl)mentioning

confidence: 99%

“…It is a semiconductor with an n-type conductivity at room temperature [1]. This is mainly attributed to a large number of defects as oxygen vacancies (VO) [2], zinc vacancies (VZn) [3], zinc interstitials (Zni) [4], and oxygen interstitials (Oi) [5]. Several authors have reported a p-type conductivity obtained, only in laboratories,…”

mentioning

confidence: 99%

Photoluminescent Enhancement by Effect of Incorporation Nickel in ZnO Films Grown

Gutiérrez

Díaz-Becerril

Garcı́a-Salgado

et al. 2021

EJENG

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“…However, when considering the common use of ZnO as an ETL in perovskite solar cells, there still some limitations. Most notably, two major drawbacks stand out: (1) poor perovskite chemical stability on ZnO substrates; and (2) the ZnO/perovskite large interfacial charge recombination due to defects at the wurtzite surface, the most stable phase at ambient temperature [ 25 ]. The ZnO–perovskite interface instability has been widely reported, with a variety of degradation mechanisms proposed [ 4 , 26 , 27 ].…”

Section: Introductionmentioning

confidence: 99%

In Situ Ethanolamine ZnO Nanoparticle Passivation for Perovskite Interface Stability and Highly Efficient Solar Cells

et al. 2022

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Zinc oxide (ZnO) has interesting optoelectronic properties, but suffers from chemical instability when in contact with perovskite interfaces; hence, the perovskite deposited on the top degrades promptly. Surface passivation strategies alleviate this instability issue; however, synthesis to passivate ZnO nanoparticles (NPs) in situ has received less attention. Here, a new synthesis at low temperatures with an ethanolamine post treatment has been developed. By using ZnO NPs prepared with ethanolamine and butanol (BuOH), (E-ZnO), the stability of the FA0.9Cs0.1PbI3 (FACsPI)–ZnO interface was achieved, with a photoconversion efficiency of >18%. Impedance spectroscopy demonstrates that the recombination at the interface was reduced in the system with E-ZnO/perovskite compared to common SnO2/perovskite and that the quality of the perovskite on the top is clearly due to the ZnO in situ passivation with ethanolamine. This work extends the use of E-ZnO as an n-type charge extraction layer and demonstrates its feasibility with methylammonium perovskite. Moreover, this study paves the way for other in situ passivation methods with different target molecules, along with new insights regarding the perovskite interface rearrangement when in contact with the modified electron transport layer (ETL).

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“…However, the results of numerous implantation studies often contradict each other because of a lack of agreement on the origin of created magnetic units. It is frequently concluded that the implantation defects rather than the transition metal (TM) impurities give rise to the observed magnetization [1,2]. It was suggested that ferromagnetic (FM) or paramagnetic (PM) phase, observed in ZnO, is either entirely defect related or appearing due to an interaction between defects and implantationintroduced impurities, including those without magnetic moments [2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…It is frequently concluded that the implantation defects rather than the transition metal (TM) impurities give rise to the observed magnetization [1,2]. It was suggested that ferromagnetic (FM) or paramagnetic (PM) phase, observed in ZnO, is either entirely defect related or appearing due to an interaction between defects and implantationintroduced impurities, including those without magnetic moments [2][3][4][5][6]. Since there are reports which attribute magnetic properties to the irradiation created defects like V Zn [2], in our previous publication [7] we attempted to disclose PM/FM phase in ZnO samples containing no TM impurity but only defects.…”

Section: Introductionmentioning

confidence: 99%

Magnetic and Structural Properties of ZnO Implanted with Co, Kr, and Ar Ions

et al. 2019

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Studies of structural and magnetic properties of Co-, Kr-, and Ar-implanted ZnO were performed by means of X-ray diffraction and SQUID magnetometry. Magnetization was measured at the same conditions prior and after implantation. For each kind of applied ions, implantation was carried out for two selected, as a result of preliminary calculations, fluences. In Co implanted ZnO, thin layer magnetization measurements revealed the appearance of the Brillouin-kind paramagnetic phase accompanied by some residual ferromagnetic/superparamagnetic contribution. The magnetic moment equal to about 1.7 µB per implanted Co ion in the case of implantation with higher dose of 4 × 10 16 cm −2 and about 2.1 µB in the case of implantation with lower dose of 2 × 10 16 cm −2 Co ions was observed. On the other hand, no changes in magnetization were observed as a result of implantation for Kr-or Ar-implanted ZnO. Thus, we could not find any evidence that irradiation damages caused by Kr and Ar ions, in the range of ion energies and fluences used by us, could result in magnetic response.

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Investigation of intrinsic defect magnetic properties in wurtzite ZnO materials

Cited by 20 publications

References 32 publications

Photoluminescent Enhancement by Effect of Incorporation Nickel in ZnO Films Grown

Photoluminescent Enhancement by Effect of Incorporation Nickel in ZnO Films Grown

In Situ Ethanolamine ZnO Nanoparticle Passivation for Perovskite Interface Stability and Highly Efficient Solar Cells

Magnetic and Structural Properties of ZnO Implanted with Co, Kr, and Ar Ions

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