Investigation of ion irradiation effects in a-SiXC1−X:H thin films

Grigonis, A.; Šilinskas, M.; Kopustinskas, V.

doi:10.1016/s0042-207x(02)00454-2

Cited by 8 publications

(4 citation statements)

References 19 publications

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“…The red shift of the D mode could be due to the influence of the mode at ∼1260 cm −1 attributed to diamond nanocrystals [12] and could indicate the mutual transformations sp 2 ↔ sp 3 between the bonds of different types. In addition, a possible formation of SiC (∼950 cm −1 ) should also lead to an increase of sp 3 bonds as well as an increase of Si amount in a-C:H films [13]. This assumption is in agreement with previous data [3,7].…”

Section: Methodssupporting

confidence: 91%

Modification of amorphous a-C:H films by laser irradiation

Grigonis¹

2007

Lithuanian J. Phys.

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Amorphous diamond-like hydrogenated carbon films a-C:H were formed on Si wafers by a direct ion beam deposition method from acetylene or a gas mixture of acetylene and hydrogen. The samples were irradiated in a scanning mode by second harmonic (wavelength λ = 532 nm) of a Q-switched YAG : Nd laser. The effect of laser irradiation was studied by Raman and infrared spectroscopy and spectroscopic ellipsometry. The changes in the optical spectra of the samples with different H amount were investigated in the dependence on laser intensity. Experimental data were interpreted taking into account the structural transformations of a-C:H films.

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Section: Methodssupporting

confidence: 91%

Modification of amorphous a-C:H films by laser irradiation

Grigonis¹

2007

Lithuanian J. Phys.

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“…1) it was obtained that the formed film was amorphous and had a high concentration of impurities. Several peaks had the following characteristics: 519 cm −1 (silicon substrate conditioned it and the peak showed that the film was transparent), 1160 cm −1 (in our opinion, it belonged to a single C-C bond with C-H trend, but other authors attributed it to nanocrystaline 1-100 nm carbon formation and related it with the small size of crystallites or/and with disorder in the tetrahedron structure [15,16]). Typical DLC lines are substantially shifted to the lower-energy side: D line to 1274 cm −1 and G line to 1430 cm −1 after 10 min of etching in CF 4 + 20% H 2 plasma.…”

Section: A-c:h Films Formation In Cf 4 and Cf 4 + H 2 Plasmamentioning

confidence: 83%

“…In previous works [15,16], we investigated the a-C:H films deposited from the mixture of hexane and hydrogen gases. It has been found that the properties of carbon films depend on ion energy, temperature, and silicon content.…”

Section: Introductionmentioning

confidence: 99%

Formation of amorphous carbon films in plasma of hydrogen and hydrocarbon mixtures

Grigonis¹,

Rutkūnienė²,

Šilinskas³

2004

Lith. J. Phys.

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Deposition of amorphous hydrogenated carbon (a-C:H) films in CF4, hexane (C6H14), or acetylene (C2H2) precursors and their mixtures with hydrogen (H2) is reported. The films were characterized by Raman spectroscopy (RS) and X-ray spectroscopy (XPS). RS indicates increase of the sp 3 /sp 2 bonding ratio and disorder in graphite clusters with increasing hydrogen content (from 0 to 50% for the acetylene precursor) in the deposition gas mixture. The opposite trend is observed when the hydrogen concentration exceeds 50% (for acetylene) or additional hydrogen is used (for hexane). Formation of polymer-like films in fluorine-containing gas plasma is observed with additional low quantity of hydrogen (∼5%). Composition of these films depends on treatment duration and conditions of irradiation.

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“…At I L > 4 MW/cm 2 , along with graphitization process, the microchannels were formed [10] in which the temperature and pressure increased locally, creating favorable conditions for the formation of diamond nanocrystals. Additionally, the possible formation of SiC should also lead to an increase in sp 3 bonds and the amount of Si in a-C:H films [11].…”

Section: Raman Scattering and Ir Spectroscopymentioning

confidence: 99%