2021
DOI: 10.1016/j.surfcoat.2021.127803
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Investigation of iridium, ruthenium, rhodium, and palladium binary metal oxide solid solution thin films for implantable neural interfacing applications

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Cited by 6 publications
(1 citation statement)
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“…In the gaseous form the ozone (o3) gas with the greater parts per billion and parts per million ranges is likely to detect or sense with the solid state conducto-metric sensors based on semiconductor oxide films like In2O3, WO3 and rhodium (Amorello et al 2023). These oxides are based on negative type semiconductor and the ozone gas concentration is inversely related to its conductance in the atmosphere (Taylor et al 2021). The rhodium is combined with the metal oxides, because it is a plantium group metals and mainly used for increasing the stability of the device.…”
Section: Introductionmentioning
confidence: 99%
“…In the gaseous form the ozone (o3) gas with the greater parts per billion and parts per million ranges is likely to detect or sense with the solid state conducto-metric sensors based on semiconductor oxide films like In2O3, WO3 and rhodium (Amorello et al 2023). These oxides are based on negative type semiconductor and the ozone gas concentration is inversely related to its conductance in the atmosphere (Taylor et al 2021). The rhodium is combined with the metal oxides, because it is a plantium group metals and mainly used for increasing the stability of the device.…”
Section: Introductionmentioning
confidence: 99%