2024
DOI: 10.7498/aps.73.20231451
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Investigation of laser-induced single event effect on SiGe BiCMOS low noise amplifiers

Pei Li,
Zhi-Yong Dong,
Hong-Xia Guo
et al.

Abstract: With the increasing development of the Complementary Metal-Oxide-Semiconductor (CMOS) technology and the Silicon-germanium (SiGe) epitaxy technology, SiGe Bipolar CMOS (BiCMOS) Low Noise Amplifiers (LNAs) are widely used in the first level of RF transceiver system in space. The core part of SiGe BiCMOS LNA is SiGe heterojunction bipolar transistor (SiGe HBT) which naturally presents excellent temperature characteristic and favorable build-in Total Ionizing Dose and Displacement Damage hardness without any radi… Show more

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