Investigation of layer number effects on the electrical properties of strained multi-layer MoS2

Unveiling the layer-dependent electronic properties in transition-metal dichalcogenide heterostructures assisted by machine learning

“…[30][31][32][33][34] Despite the different types of species, in multi-layer structures, the number of layers is an important aspect. [35][36][37] For example, as shown in Fig. 1, the heterojunction composed of bilayer MoS 2 and monolayer WSe 2 (namely 2MoS 2 -WSe 2 ) is a semiconductor with a direct bandgap of 0.53 eV, which is consistent with the previous study.…”

Semimetal transition in curved MoS2/MoSe2 Van der Waals heterojunction by dispersion-corrected density functional theory

“…[13] Hosseini et al reported that electron mobility (μ s ) is proportional to an applied strain and multilayer thickness with values of μ s ~ 300 cm 2 V −1 s −1 at 3% tensile strain in multilayer MoS 2 the surface. [14] And Cui et al [15] indicated a stable resistive switching behavior under bending conditions for Ni/TiO 2 , making a higher p-n heterojunction in comparison with ITO/Si heterojunction as reported by Yao et al [16] for tunable band structure as a function of elastic strain. However, there are a small number of reports regarding the variation of the electronic properties of TMD heterojunctions -especially important MoS 2 and MoSe 2 -as a result of mechanical bending; thus, its understanding is crucial to take advantage of TMD heterojunctions in electronic applications.…”

Field-Effect Transistor Based on MoSi$_2$N$_4$ and WSi$_2$N$_4$ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

“…Graphene with full-sp2 carbon atoms exhibits the remarkable electronic properties [2]- [4], however, absence of an energy gap seriously precluded its exploitation in electronic applications [5], [6]. Efforts to create an energy gap in graphene were ineffective [5], [7], [8], and researches extend into other two-dimensional materials such as the transition metal dichalcogenides (TMDs) [9]- [11], indium selenide [12], indium telluride [13], and phosphorene [14] with appropriate energy gaps. The design of new 2D materials with attractive piezoelectricity and flexoelectricity is very attractive to expand the practical application of two-dimensional materials [15], [16].…”