Investigation of localized levels in Na-intercalated GaSe single crystal

Osman, M.A.; Elosely, M.A.; Gadalla, A.

doi:10.1016/s0921-4526(98)00140-9

Cited by 21 publications

(10 citation statements)

References 25 publications

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“…These defects created during the growth process lead to an increase of photosensitivity, but decrease the mobility due to impurities and defects produced different scattering mechanism as observed in the mobility-temperature dependence. Similar broadening and asymmetric behavior was reported GaSe 0.95 S 0.05 :Na mixed crystals [18,19]. Fig.…”

Section: Resultssupporting

confidence: 85%

Electrical and photoconductive properties of GaS0.75Se0.25mixed crystals

Karabulut¹,

Parlak²,

Yılmaz³

et al. 2005

Cryst. Res. Technol.

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The conductivity, mobility, photoconductivity and photo response measurements in GaS 0.75 Se 0.25 mixed crystals were carried out in the temperature range of 150-450 K. The room temperature conductivity, mobility and electron concentration values were 10 -9 (Ω-cm), 48 cm 2 V -1 s -1 and ~10 9 cm -3 , respectively. Two donor levels were obtained from temperature-dependent conductivity and carrier concentration, located at energies of about 755 and 465 meV below the conduction band. Single donor-single acceptor analysis yields the same donor level at 465 meV with donor and acceptor concentrations of 8.7x1014 and 5.3x10 13 cm -3 , respectively. The mobility-temperature dependence shows that ionized impurity scattering dominates the conduction up to the temperature 310 K with different temperature exponent, while above this critical temperature; the phonon scattering is dominant conduction mechanism. From the photo-response spectra, the maximum photocurrent was observed for all the samples at 2.42 eV, and varied slightly with temperature. Moreover, the photocurrent-light intensity dependence in these crystals obeys the power law, I ph ∝ φ γ with γ between 1.7 and 2.0 for various applied fields and temperatures.

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Section: Resultssupporting

confidence: 85%

Electrical and photoconductive properties of GaS0.75Se0.25mixed crystals

Karabulut¹,

Parlak²,

Yılmaz³

et al. 2005

Cryst. Res. Technol.

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“…The observed broadening of the PC spectrum at 300 K (shown by the rows in Fig. 3) could be attributed to the presence of native structural defects such as Ga, S or Se interstitial atoms and/or vacancies and strain induced defects either in the bulk or close to the surface of the most layered crystals, as well as the presence of Si impurities with low concentration introduced into GaS 0.5 Se 0.5 during the growth process in ungraphatized ampoules [14]. These imperfections result in raising the exciton-imperfection interaction accompanied by a broadening of spectral distribution of PC in GaS 0.5 Se 0.5 .…”

Section: Resultsmentioning

confidence: 98%

Investigation of Localized Levels in GaS0.5Se0.5 Layered Crystals by Means of Electrical, Space-Charge Limited Current and Photoconductivity Measurements

Qasrawi

Gasanly

2002

phys. stat. sol. (a)

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To identify the localized levels in GaS0.5Se0.5 single crystals, the dark electrical conductivity, current–voltage characteristics and photoconductivity measurements were carried out in the temperature range of 250–400 K. Temperature dependence of dark electrical conductivity and the space‐charge limited current studies indicate the presence of a single discrete trapping level located at 0.31 eV below the conduction band with a density of about 1.3 × 1015 cm—3. The conductivity data above 320 K reveal an additional donor level with activation energy of 0.40 eV indicating the extrinsic nature of conduction. The spectral distribution of photocurrent in the photon energy range of 0.65—5.9 eV reveals an indirect band gap of 2.26 eV. The photocurrent–illumination intensity dependence follows the law Iph ∝ Fγ, with γ being 1.0, 0.65, and 0.5 at low, moderate and high illumination intensities, respectively. The corresponding behavior indicates the domination of monomolecular recombination, near equal densities of trapped and recombination centers and bimolecular recombination. It is observed that the photocurrent increases in the temperature range from 250 K up to Tm = 360 K and decreases for T > Tm. The temperature dependence of the photocurrent reveals two additional impurity levels with activation energies of 0.14 and 0.10 eV below and above Tm, respectively.

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“…In addition, GaSe crystals have been used for X-ray beam detection by producing direct current from high fluxes of 130 and 170 kV X-ray at different exposure rates [5]. Growth [6], crystal structure [7], electrical [8][9][10][11] and optical [12] properties of GaSe single crystals have been investigated in detail. Attentions have been also made to study the optical properties of amorphous GaSe thin films in the wavelength spectral range 400-1100 nm.…”

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confidence: 99%

Temperature dependence of the energy gap, refractive index and optical‐oscillator parameters of amorphous Ga_xSe_1–x(x = 0.4, 0.5, 0.6) thin films

Mustafa

Gupta

Goyal

et al. 2009

Phys. Status Solidi (c)

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Thin films of a‐GaxSe1–x (x = 0.4, 0.5, 0.6) are prepared by vacuum evaporation technique onto well‐cleaned glass substrates. The transmittances of the films are measured at various temperature ranges (100 K‐400 K) in the wavelength range of 400‐1100 nm. Optical absorption obeyed the non‐direct transition process. The temperature dependence of the optical energy gaps in that range are fitted with four equations beginning with linear, non linear, Varshni and Bose Einstein equations. The results have got appeared the best fitting is with the Varshni equation. We have found that the energy gap decreases with the increase in Ga percentage in these thin films and increase in energy gap with the decrease of temperature. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Investigation of localized levels in Na-intercalated GaSe single crystal

Cited by 21 publications

References 25 publications

Electrical and photoconductive properties of GaS0.75Se0.25mixed crystals

Electrical and photoconductive properties of GaS0.75Se0.25mixed crystals

Investigation of Localized Levels in GaS0.5Se0.5 Layered Crystals by Means of Electrical, Space-Charge Limited Current and Photoconductivity Measurements

Temperature dependence of the energy gap, refractive index and optical‐oscillator parameters of amorphous Ga_xSe_1–x(x = 0.4, 0.5, 0.6) thin films

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Investigation of localized levels in Na-intercalated GaSe single crystal

Cited by 21 publications

References 25 publications

Electrical and photoconductive properties of GaS0.75Se0.25mixed crystals

Electrical and photoconductive properties of GaS0.75Se0.25mixed crystals

Investigation of Localized Levels in GaS0.5Se0.5 Layered Crystals by Means of Electrical, Space-Charge Limited Current and Photoconductivity Measurements

Temperature dependence of the energy gap, refractive index and optical‐oscillator parameters of amorphous GaxSe1–x (x = 0.4, 0.5, 0.6) thin films

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Temperature dependence of the energy gap, refractive index and optical‐oscillator parameters of amorphous Ga_xSe_1–x(x = 0.4, 0.5, 0.6) thin films