Investigation of localized states in cadmium zinc telluride crystals by scanning photodielectric spectroscopy

Komar, V. K.; Migal, V. P.; Chugai, O. N.; Puzikov, V. M.; Nalivaiko, D. P.; Grebenyuk, N. N.

doi:10.1063/1.1525883

Cited by 16 publications

(7 citation statements)

References 4 publications

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“…Moreover, the spectral dependence of the short-wavelength absorption coefficient for the crystals studied is influenced not only by interband electron transitions but also by transitions from levels lying in the band gap. Note in this context that, as shown earlier [11], native structural defects and defect complexes in Cd 0.9 Zn 0.1 Te crystals produce a variety of energy levels in their band gap near the top of the valence band.…”

Section: Resultsmentioning

confidence: 92%

Cd1 - x ZnxTe crystals for gamma detectors: Evaluation of quality from photoconductivity measurements

et al. 2005

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Data are presented on the spectral dependence of steady-state photoconductivity for Cd 1 -x Zn x Te ( x = 0.12-0.15) crystals grown under different conditions. The results indicate that the full width at half maximum of the near-edge photoconductivity peak is sensitive to the state of native structural defects and can be used to assess the quality of Cd 1 -x Zn x Te crystals and their applicability in high-resolution gamma detectors.

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Section: Resultsmentioning

confidence: 92%

Cd1 - x ZnxTe crystals for gamma detectors: Evaluation of quality from photoconductivity measurements

et al. 2005

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“…4(b)]. The method is described in [7] and consists in measuring small increments of effective values of a dielectric permittivity, , and loss coefficient, , arising from modification of the photoexcitation wavelength. Analysis of the dependences, and , represented on the complex plane allows determining localized states' energy positions.…”

Section: Resultsmentioning

confidence: 99%

A method to study uniformity of electrophysical properties of high-resistance CdZnTe crystals

Komar

Chugai

Abashin

et al. 2005

IEEE Trans. Nucl. Sci.

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Uniformity of properties of a semiconductor material is one of the important conditions to achieve high spectrometric performance of ionizing radiation detectors. To study uniformity of electrophysical properties of crystals, an original method for acquisition of distributions of local values of a dielectric permittivity and tangent of a dielectric loss angle tan in high-resistance semiconductors is offered. The method was approved on Cd 1 Zn Te ( = 0 1 to 0.16) crystals grown by Bridgman method under high pressure of inert gas. Locality and reproducibility of measurements are provided by a special design of a movable electrode, with both the area and the hold-down pressure of the electric contact being unvaried. Differences in and tan distributions over the sample's area and an effect of uniform monochromatic illumination at a varied wavelength on these distributions are revealed. The physical nature of revealed irregularities is analyzed with involving results of researching CdZnTe crystals by diverse methods.

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“…The exposure dose rate of radiation applied to the specimen was only ~700 μR/h. The energy spectrum of charge carrier localized states in the crystals was studied by the scanning photodielectric spectroscopy method (SPDS) [5].…”

Section: Specimens and The Routine Of Experimentsmentioning

confidence: 99%

Effect of low-dose-rate ionizing radiation on the complex dielectric permittivity of CdZnTe crystals

Poluboiarov

Chugai

Oliinyk

et al. 2023

physics

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For the first time, the change in the real and imaginary parts of Cd1–xZnxTe crystals complex dielectric permittivity when exposed to ionizing radiation with a small exposure dose rate (about hundreds of μR/h) has been studied. Significant changes in the values of both parts of complex dielectric permittivity have been revealed. Regularities of specified changes have been established and explained taking into account a different radiation effect on free and bound charges. The basis of effect is the changes in the charge carrier localized states of point defect associates. Their appearance is due to a high concentration and a variety of intrinsic structural defects in the studied crystals as a consequence of the deviation of the crystal composition from the stoichiometric one.

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Investigation of localized states in cadmium zinc telluride crystals by scanning photodielectric spectroscopy

Cited by 16 publications

References 4 publications

Cd1 - x ZnxTe crystals for gamma detectors: Evaluation of quality from photoconductivity measurements

Cd1 - x ZnxTe crystals for gamma detectors: Evaluation of quality from photoconductivity measurements

A method to study uniformity of electrophysical properties of high-resistance CdZnTe crystals

Effect of low-dose-rate ionizing radiation on the complex dielectric permittivity of CdZnTe crystals

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