Investigation of magnetocrystalline anisotropy by planar Hall effect in GaMnAs epilayers grown on vicinal GaAs substrates

Abstract

Articles you may be interested inInvestigation of superlattices based on ferromagnetic semiconductor GaMnAs by planar Hall effect J. Appl. Phys. 111, 07D310 (2012); 10.1063/1.3678436 Magnetic anisotropy in (Ga,Mn)As grown on vicinal GaAs: Effects of the orientation of microwave magnetic field J. Appl. Phys. 109, 07C301 (2011); 10.1063/1.3535426 Quantitative analysis of the angle dependence of planar Hall effect observed in ferromagnetic GaMnAs film

Nonvanishing anisotropic magnetoresistance in Rashba two-dimensional electron systems with nonmagnetic disorders

“…When M 0 → −M 0 , we make transformation k → −k in Eq. (11). This transformation will not change the total integral, hence the conductivities satisfy the symmetric property.…”

Electric field control of thermal stability and magnetization switching in (Ga,Mn)As

“…A 4-nm-thick Ga 0.93 Mn 0.07 As layer is grown on a semiinsulating GaAs (001) vicinal substrate (4 off from (001) toward [100]) at 200 C by molecular beam epitaxy. 17,18 The buffer layer underneath consists of 4-nm GaAs/30-nm Al 0.8 Ga 0.2 As/30-nm GaAs. The sample is first annealed at 180 C for 5 min, then, processed into a Hall bar geometry along [ 110] with 40-lm width and 144-lm length as shown in Fig.…”

In-Plane Uniaxial Magnetic Anisotropy of [(InyGa1-y)1-xMnx]As Characterized by Planar Hall Effect

“…[9][10][11][12][13][14][15][16][17] The magnetic anisotropy of (Ga 1Àx Mn x )As shows hole concentration dependency which can be qualitatively explained in terms of the p-d Zener model of ferromagnetism assuming a small trigonal distortion. [9][10][11][12][13][14][15][16][17]23,24) The easy magnetization axis can be rotated from the ½ " 1 110 direction to the [110] direction with increasing the hole concentration. The uniaxial magnetic anisotropy is dominant over the cubic magnetic anisotropy with increasing temperature.…”

“…7) In addition, a giant planar Hall effect was reported in a ternary ferromagnetic semiconductor (Ga 1Àx Mn x )As, which is by 4 orders of magnitude greater than that previously observed in metallic ferromagnets. [7][8][9] Therefore, it is expected that [(In y Ga 1Ày ) 1Àx Mn x ]As also has a large planar Hall effect, and the large signal can make the characterization of magnetic anisotropy easy and reliable.…”