2017
DOI: 10.1039/c7ra06385g
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Investigation of micro- and nanoscale barrier layer capacitance mechanisms of conductivity in CaCu3Ti4O12via scanning probe microscopy technique

Abstract: In this work we disclose micro- and nanoscale origins of the unusually high dielectric constant characteristic of CaCu3Ti4O12 (CCTO) ceramic by using the Scanning Probe Microscopy (SPM) technique.

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Cited by 36 publications
(29 citation statements)
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“…This figure supports recent measurements for the current density as higher charge density equates to higher current density. This argument also explains the scanning electron microscopy measurements that show a higher charge density in the grain boundary region and how the permittivity of samples typically increases when the grain boundary resistance decreases …”
supporting
confidence: 91%
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“…This figure supports recent measurements for the current density as higher charge density equates to higher current density. This argument also explains the scanning electron microscopy measurements that show a higher charge density in the grain boundary region and how the permittivity of samples typically increases when the grain boundary resistance decreases …”
supporting
confidence: 91%
“…The blue line displays measurements of current at different points through a CCTO sample (data adapted from ref. ). The different regions of the sample are labeled.…”
mentioning
confidence: 97%
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“…Herein, ε′ increases with growth of grains; suggesting that, giant dielectric behavior in this region might be related to space charge or interfacial polarization originating from grain boundary regions . On the other hand, the low dielectric permittivity at high frequencies is primarily originated from the bulk grain response …”
Section: Resultsmentioning
confidence: 93%
“…The peaks are more pronounced for the CT/deficient CC X T Y O ceramics, which as previously seen present the highest electrical relaxations. All these experimental results reveal that ε′′ at low frequency should be due to interface polarization from grain boundaries, while the dielectric relaxation peaks at high frequency region can be associated to the bulk or grain effects, attributed to phenomena associated with accumulation of space charges or point defects …”
Section: Resultsmentioning
confidence: 96%