2022
DOI: 10.1109/ted.2022.3155590
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Investigation of Modulation Bandwidth of InGaN Green Micro-LEDs by Varying Quantum Barrier Thickness

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Cited by 16 publications
(5 citation statements)
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“…It has also been found that a thinner QB can improve the total carrier recombination rate of InGaN lLEDs. 130 In addition, Back et al 131 systemically investigated the effect of the thickness of the EBL of p-AlGaN on InGaN-based blue lLEDs with sizes ranging from 10 Â 10 to 80 Â 80 lm 2 . When the performance of a device fabricated between 2 Â 10 18 cm À3 Mg-doped 17 nm-thick Al 0.2 In 0.02 Ga 0.78 N and 2 Â 10 19 cm À3 Mg-doped 45 nm-thick Al 0.12 In 0.02 Ga 0.86 N (referred to as a balanced EBL) was assessed [Fig.…”
Section: Novel Epitaxial Structures For Iii-nitride Lledsmentioning
confidence: 99%
“…It has also been found that a thinner QB can improve the total carrier recombination rate of InGaN lLEDs. 130 In addition, Back et al 131 systemically investigated the effect of the thickness of the EBL of p-AlGaN on InGaN-based blue lLEDs with sizes ranging from 10 Â 10 to 80 Â 80 lm 2 . When the performance of a device fabricated between 2 Â 10 18 cm À3 Mg-doped 17 nm-thick Al 0.2 In 0.02 Ga 0.78 N and 2 Â 10 19 cm À3 Mg-doped 45 nm-thick Al 0.12 In 0.02 Ga 0.86 N (referred to as a balanced EBL) was assessed [Fig.…”
Section: Novel Epitaxial Structures For Iii-nitride Lledsmentioning
confidence: 99%
“…The QCSE has been reported to be mitigated by the optimization of epitaxial structures. For example, thin quantum barriers (QBs) in MQWs are crucial for reducing carrier lifetimes [ 90 , 91 , 92 ], which can decrease the polarization field inside the QW, enhance hole injection, and result in greater uniformity in carrier distribution across the active region. The schematic architectures of the LED I, LED II, and LED III samples are shown in Figure 9 a, and their corresponding GaN QB thicknesses are 12, 9, and 6 nm.…”
Section: Solution For Increasing Eqe Of µLedsmentioning
confidence: 99%
“…The QCSE has been reported to be mitigated by the optimization of epitaxial structures. For example, thin quantum barriers (QBs) in MQWs are crucial for reducing carrier lifetimes [90][91][92], which can decrease the polarization field inside the QW, enhance hole injection, and result in greater uniformity Ref. [88], with the permission of The Japan Society of Applied Physics.…”
Section: Mitigate the Qcse Effectmentioning
confidence: 99%
“…As mentioned in the previous section, for micro-LEDs, the small luminous area limits their potential for long-distance communication due to limited light output power. Numerous approaches have been used to enhance output power by improving epitaxy quality and altering device structure; however, there is still a trade-off between output power and modulation bandwidth, and it is challenging to improve both characteristics simultaneously [ 62 ]. Designing series or parallel connections between micro-LED structures might alleviate this trade-off by significantly increasing the output power without compromising optical bandwidth.…”
Section: Progress For Micro-led Vlc In Yellow–green To Red Emission W...mentioning
confidence: 99%