Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode

Mehdi, H.; Réverêt, François; Robert-Goumet, Christine; Bideux, L.; Gruzza, B.; Hoggan, Philip E.; Leymarie, J.; André, Yves-Bernard; Gil, Evelyne; Pelissier, B.; Levert, T.; Paget, D.; Monier, Guillaume

doi:10.1016/j.apsusc.2021.152191

Cited by 6 publications

(5 citation statements)

References 56 publications

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“…The force increased first and decreased with an increasing plowing distance, showing a similar evolution of irregularities under various rough peak scales. As shown in Figure 10a, at the plowing distance of 6 nm, the tangential force curve of the rough peak with a radius of 4 nm fluctuated violently with the nucleation of a dislocation loop with the Burgers vector = 1/2 [1][2][3][4][5][6][7][8][9][10]. After plowing at a distance of 0.5 nm, the force curve decreased significantly due to the formation of a crack and a large number of protruding chips piled-up above the asperity.…”

Section: The Effect Of the Asperity Sizementioning

confidence: 98%

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The Dislocation- and Cracking-Mediated Deformation of Single Asperity GaAs during Plowing Using Molecular Dynamics Simulation

Fan

et al. 2022

Micromachines

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This work simulates the plowing process of a single asperity GaAs by diamond indenter using molecular dynamics simulations. The deformation mechanism of asperity GaAs is revealed by examining the topography evolution and stress state during the plowing. This work also investigates the origin of the influence of asperity size, indenter radius and plow depth on the deformation of the asperity GaAs. We observed the initiation and propagation of cracks up to the onset of fracture and the plastic activity near the indenter, obtaining more information usually not available from planar GaAs in normal velocity plowing compared to just plastic activity. The simulations demonstrated the direct evidence of cracking in GaAs induced by plowing at an atomic level and probed the origin and extension of cracking in asperity GaAs. This finding suggests that cracking appears to be a new deformation pattern of GaAs in plowing, together with dislocation-dominated plasticity modes dominating the plowing deformation process. This work offers new insights into understanding the deformation mechanism of an asperity GaAs. It aims to find scientific clues for understanding plastic removal performed in the presence of cracking.

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Section: The Effect Of the Asperity Sizementioning

confidence: 98%

“…Gallium arsenide (GaAs) has gained significant attention as a semiconductor material due to its wider energy bandgap, high frequency, higher electron mobility and other characteristic advantages compared to Si [1,2]. Therefore, it is widely used in communication devices and integrated microcircuits.…”

Section: Introductionmentioning

confidence: 99%

The Dislocation- and Cracking-Mediated Deformation of Single Asperity GaAs during Plowing Using Molecular Dynamics Simulation

Fan

et al. 2022

Micromachines

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“…В связи с этим важен учет кристаллографической ориентации полируемой пластины. В частности, для направления [111] теоретически обрабатываемая поверхность может состоять из атомов одного сорта. В направлениях [100] и [110] плоскости состоят из атомов 3 и 5 групп.…”

Section: параметры процесса хмпunclassified

“…Для GaAs разрабатываются также методики нитрирования поверхностей в растворах гидразина [96, 110] и обработкой в плазме азота [111].…”

Section: очистка и пассивация поверхностей материалов а 3 вunclassified

Modern scientific and practical approaches to the production of substrates from semiconductor compounds А3В5. Review

Abramova,

Kozlov,

Khokhlov

et al. 2024

kcmf

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Modern electronic and optical engineering uses А3В5 single-crystal semiconductor materials (GaAs, GaSb, InAs, InSb, and InP) as substrates for epitaxial growth. These materials are obtained in the form of massive single-crystal ingots. Therefore, technologies for processing of these A3B5 wafers are developed to produce the substrates for epitaxial growth. The miniaturization of modern systems and devices demands the high quality of the substrates surface. One of the main criteria is a low surface roughness (Ra) (of about 0.5 nm). To meet this requirement, it is necessary to elaborate the existing methods of surface treatment. The review analyses the current approaches to the treatment of the surface of semiconductor wafers of А3В5 single-crystal materials. It considers the specifics of wafers machining followed by their polishing. The article also presents an analysis of the polishing methods. It reveals that at the moment the chemical-mechanical polishing of А3В5 wafers is the most commonly used method. The review presents the main parameters of this process and systematizes the existing theoretical approaches. The analysis determined the key tendencies in the development of chemical-mechanical polishing of semiconductor А3В5 wafers aimed at increasing the quality of wafers. The article also analyses the latest studies regarding the methods of chemical polishing as an alternative to chemical-mechanical polishing. The next section focuses on surfacepassivation methods used upon obtaining wafers with a low roughness. Passivation is performed to reduce the reactivity of the surface and stabilize surface states of wafers. A classification of passivation methods is suggested based on the obtained chemical composition of the surface, when the passivation layers are created using oxidation, sulfidizing, or nitriding. Another classification is based on the method of creating passivating coatings and includes wet chemical methods and physico-chemical methods

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“…In recent decades, nitridation of GaAs substrates has been demonstrated using a variety of precursors and techniques (e.g. hydrazine [12,13], ammonia [14]; plasma [15][16][17], thermal [18], epitaxy [19,20]). Though GaAs/GaN surface conversion and increased photoluminescence have been demonstrated on bulk materials [21] [22] and GaNAs shells [23], reports on GaAs nanostructures have been scarce [24], even requiring annealing to generate a nitride layer [25].…”

Section: Introductionmentioning

confidence: 99%

Nitrogen plasma passivation of GaAs nanowires resolved by temperature dependent photoluminescence

et al. 2022

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We demonstrate a significant improvement in the optical performance of GaAs nanowires achieved using a mixed nitrogen-hydrogen plasma which passivates surface states and reduces the rate of nonradiative recombination. This has been confirmed by time-resolved photoluminescence measurements. At room temperature, the intensity and lifetime of radiative recombination in the plasma-treated nanowires was several times greater than that of the as-grown GaAs nanowires. Low-temperature measurements corroborated these findings, revealing a dramatic increase in photoluminescence by two orders of magnitude. Photoelectron spectroscopy of plasma passivated nanowires demonstrated a yearlong stability achieved through the replacement of surface oxygen with nitrogen. Furthermore, the process removed the As0 defects observed on non-passivated nanowires which are known to impair devices. The results validate plasma as a nitridation technique suitable for nanoscale GaAs crystals. As a simple ex-situ procedure with modest temperature and vacuum requirements, it represents an easy method for incorporating GaAs nanostructures into optoelectronic devices.

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Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode

Cited by 6 publications

References 56 publications

The Dislocation- and Cracking-Mediated Deformation of Single Asperity GaAs during Plowing Using Molecular Dynamics Simulation

The Dislocation- and Cracking-Mediated Deformation of Single Asperity GaAs during Plowing Using Molecular Dynamics Simulation

Modern scientific and practical approaches to the production of substrates from semiconductor compounds А3В5. Review

Nitrogen plasma passivation of GaAs nanowires resolved by temperature dependent photoluminescence

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