Investigation of Negative Differential Capacitance-Voltage Dependences of Shottky Diode Structures With Gaas/Inas QDS

Abstract

Ñapacitance-voltage investigations were made on Schottky diodes with embedded GaAs/InAs quantum dots and quantum wells. An effect of the negative differential capacitance(NDC) was clear observed. Numerical modeling of the C-V dependences was carried out with temperature and concentration of QDs as parameters. Energy structure of the investigated samples was examined by deep level transient spectroscopy(DLTS). It was shown that the proposed model is in good agreement with experiment and describes well the NDC effect.