Investigation of New Multi-Channel HEMT Based on InAs0.3P0.7/InP for Future Power Terahertz HEMT’s

Abstract

In this paper, we perform the increase of cut-off frequency for a HEMT based on the InP substrate by the use of a new concept which can be presented by the use of a Multi-Channel (M-Ch) based on InAs[Formula: see text]P[Formula: see text]/InP. This concept leads to formation of two confining interfaces and also an added barrier in the channel level which in turn leads to enhance the confining conditions of charge carriers. The obtained cut-off frequency for the proposed HEMT based on InAs[Formula: see text]P[Formula: see text]/InP has reached the Tera-hertz range which is the best of all existing power technologies. This morphology of structure is the first power structure that has reached this frequency range due to the use of InAs[Formula: see text]P[Formula: see text] as the main channel, it has better transport proprieties compared to that of InP. The same task is for the drain current in which the proposed structure has shown a high value compared to the structure based on a single-channel (S-Ch) formed by InP due to increasing confining interface number where the booth interface InAlAs/InAsP and InAsP/InP are being used.