Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach

Dauelsberg, M.; Brien, D.; Püsche, Roland; Schön, Oliver; Yakovlev, E.V.; Segal, A.S.; Талалаев, Р.А.

doi:10.1016/j.jcrysgro.2010.07.064

Cited by 15 publications

(12 citation statements)

References 10 publications

(13 reference statements)

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“…We developed dedicated MOCVD solutions to address these requirements based on Planetary Reactor® technology in an 8 x 150 mm batch wafer configuration [6,7]. This Planetary Reactor ® is a horizontal flow reactor with a ring of 8 satellite wafer disks surrounding a central gas injector.…”

Section: Resultsmentioning

confidence: 99%

25‐2: Enabling MOCVD Technology for Micro LED High Volume Manufacturing

Boyd

Beckers

Eickelkamp

et al. 2019

Symp Digest of Tech Papers

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Epitaxy wafers are key to the technology development of Micro LED displays. As Micro LED chips are extremely small, the quality of epitaxy wafers including wavelength uniformity and low defect becomes crucial for further production process. We present progress on improvements to MOCVD technology of blue and red Micro LEDs based on Planetary Reactor ® technology to meet the new challenging wavelength and defect requirements.

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Section: Resultsmentioning

confidence: 99%

25‐2: Enabling MOCVD Technology for Micro LED High Volume Manufacturing

Boyd

Beckers

Eickelkamp

et al. 2019

Symp Digest of Tech Papers

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show abstract

“…We have developed dedicated MOCVD solutions to address these requirements based on Planetary Reactor® technology in an [8][9][10]. This Planetary Reactor® is a horizontal flow reactor with a ring of 8 satellite wafer disks surrounding a central gas injector.…”

Section: Resultsmentioning

confidence: 99%

45‐3: Invited Paper: Enabling the Next Era of Display Technologies by Micro LED MOCVD Processing

Beckers

Fahle

Mauder

et al. 2018

Symp Digest of Tech Papers

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“…This target GaN layer was grown without rotating the wafer, which allowed us to investigate the growth rate profile in the direction of the flow of precursors, hence providing information on the dependence of the growth rate on the residence time of the precursors in the reactor. 37,38,53 The growth conditions for the target GaN layer were systematically varied to analyze the dependence of the growth rate profile on the deposition conditions. Trimethylgallium (TMGa) was used as the group-III precursor, with NH 3 used as the group-V precursor, and H 2 as the carrier gas.…”

Section: Methodsmentioning

confidence: 99%

“…[23][24][25] Developments in computer simulation technology have allowed us to analyze the elementary reactions numerically, and several reaction models have been reported, which were capable of reproducing experimental results with specific reactor configurations and growth conditions. [26][27][28][29][30][31][32][33] Several plausible candidate growth species that contribute to layer growth have been reported, including TMGa:NH 3 adducts, [(CH 3 ) 2 GaNH 2 ] 3 , [34][35][36] diatomic GaN, 37,38 and GaNH 2 . 39 However, a model that can describe the growth behavior consistently in all reactor configurations and for all process conditions remains elusive.…”

mentioning

confidence: 99%

Kinetic Analysis of GaN-MOVPE via Thickness Profiles in the Gas Flow Direction with Systematically Varied Growth Conditions

Momose

Kamiya

Suzuki

et al. 2016

ECS J. Solid State Sci. Technol.

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We carried out a kinetic analysis of metallorganic vapor phase epitaxy (MOVPE) of GaN to investigate the dependence of the growth rate on the process conditions as a function of residence time of the precursors in the reactor. The wafer was not rotated during growth, allowing us to analyze the thickness profile of the film in the direction of gas flow, and hence the dependence of the growth rate on the residence time. The growth rate is determined mainly by the concentration of the growth species and mass transfer of the growth species to the wafer surface. The growth rate peaked in the flow direction, and the position of this peak could, in most cases, be explained by considering a combination of the linear gas velocity and the time constant for vertical diffusion of trimethylgallium (TMGa) and/or growth species across the NH 3 feed stream to the wafer surface. In some cases this was not possible, indicating that more complex effects were significant. This work is expected to contribute to understanding of the reaction pathways for GaN-MOVPE, and the growth rate data reported here are expected to provide useful benchmarks for growth simulations that combine computational fluid dynamics and reaction models. Gallium nitride (GaN) is a III/V compound semiconductor material with considerable potential for optoelectronic and high-power electronic devices due to its wide bandgap and high breakdown voltage.1-5 For these reasons, GaN is currently used for mass-produced light-emitting diodes (LEDs), lasers, and high-frequency devices. 6-10Metalorganic vapor phase epitaxy (MOVPE) is commonly employed to manufacture GaN films using trimethylgallium (TMGa) and NH 3 as group-III and group-V precursors, respectively. Research into the growth mechanisms involved in GaN-MOVPE in both academic and industrial institutions has found that the reaction chemistry is relatively complicated, consisting of gas-phase reactions followed by surface reactions. [11][12][13][14][15][16][17] This intrinsic complexity of the reactions suggests that it is not straightforward to design optimal reactors for mass production as well as settling the optimal growth conditions via conventional empirical approaches. Therefore, a variety of studies have been carried out with the aim of understanding GaN-MOVPE. Initially, attention mainly focused on identification of intermediate species that are generated from the gas-phase precursors, which contribute to the layer growth. It then became apparent that parasitic reactions in the gas phase resulted in the formation of adducts, even in the non-heated area of the reactor, in addition to those formed in the hot zone in the vicinity of the heated substrate.18,19 Some of these reaction products led to particle formation without contributing to layer growth. [20][21][22] 39 However, a model that can describe the growth behavior consistently in all reactor configurations and for all process conditions remains elusive. This is our concern, and necessitates comprehensive investigation on the behavior of GaN growt...

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Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach

Cited by 15 publications

References 10 publications

25‐2: Enabling MOCVD Technology for Micro LED High Volume Manufacturing

25‐2: Enabling MOCVD Technology for Micro LED High Volume Manufacturing

45‐3: Invited Paper: Enabling the Next Era of Display Technologies by Micro LED MOCVD Processing

Kinetic Analysis of GaN-MOVPE via Thickness Profiles in the Gas Flow Direction with Systematically Varied Growth Conditions

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