Investigation of non-Pb all-perovskite 4-T mechanically stacked and 2-T monolithic tandem solar devices utilizing SCAPS simulation

Abstract

SCAPS simulation was utilized to complement previously published perovskite-on-Si tandem solar devices and explore herein viable all-perovskite 4-T mechanically stacked and 2-T monolithic non-Pb tandem structures. CsSn0.5Ge0.5I3 (1.5 eV) was used as top cell wide bandgap absorber, while CsSnI3 (1.3 eV) was chosen as bottom cell low bandgap absorber. The top cell was simulated with AM 1.5G 1 Sun spectrum, and the bottom cell was simulated with the filtered spectrum from the top cell. To form a 2-T monolithic tandem device, ITO was used as the recombination layer; the current matching condition was investigated by varying the thickness of the absorber layers. For a current-matched device with a Jsc of 21.2 mA/cm2, optimized thicknesses of 450 nm and 815 nm were obtained for the top and bottom absorber layers, respectively. At these thicknesses, the PCEs of the top and bottom cells were 14.08% and 9.25%, respectively, and 18.32% for the final tandem configuration. A much simpler fabricated and simulated 4-T mechanically stacked tandem device, on the other hand, showcased top and bottom cell PCEs of 15.83% and 9.15%, at absorber layer thicknesses of 1300 nm and 900 nm, respectively, and a final overall tandem device PCE of 19.86%.

Two-Terminal Tandem Solar Cells based on Perovskite and Transition Metal Dichalcogenides

“…SCAPS-1D is used to simulate and study various kind of single junction and tandem solar cells. 31,34,38 All the simulations have been performed at temperature 300 K. Further, the losses due to the reflection at interfaces as well as series resistance of the device have not been taken into consideration. Fig.…”

“…Here,the carrier mobility parameters have been taken from Hima et al 33 We have chosen this composition and the bandgap as the perovskites around this bandgap show high spectral intensity and high stability under illumination. 34,35 Further, the absorption coefficient data for the perovskite layer has been taken from the SCAPS-1D library.…”

“…Further, EQE of the MoTe 2 solar cell also increases with the increase in the thickness of the MoTe 2 layer with the step at 1125 nm which marks the band gap of MoTe 2 . 42 Relatively lower EQE of MoTe 2 cell limits the current density of the bottom subcell in tandem geometry as discussed later.As SCAPS-1D software (version 3.3.08) does not support simulation of 2T tandem solar cell structures, we employ the general technique where the top subcell is analyzed first using standard, unfiltered AM 1.5G spectrum and the filtered spectrum after the top subcell is used to illuminate the bottom subcell 34,43. Figure 4(a) shows power dependence of the transmitted spectrum on the thickness of CH 3 NH 3 PbI 3 layer following the top subcell.…”

Perovskite and Polymeric Solar Cells: A Comparison of Advances and Key Challenges

“…Perovskite/IBC Silicon a) 26.4 [49] Perovskite/Silicon 27.0 [50] Perovskite/CIGS b) 20.5 [51] Perovskite/Perovskite 19.86 [52] Perovskite/Perovskite 20.1 [53] 2T Perovskite/Silicon 29.8 [54] Perovskite/Silicon 28.4 [55] Perovskite/Perovskite 16.9 [53] Perovskite/Perovskite 18.3 [52] Perovskite/Perovskite 24.5 [56] a)…”

Recent Advances in Modeling of Perovskite Solar Cells Using SCAPS-1D: Effect of Absorber and ETM Thickness

“…Several other authors have also studied the effect of perovskite thickness [39][40][41][42][43][44][45][46][47] using SCAPS and their studies show that, poor film quality can affect the coverage of perovskite on ETL. If the quality of film is poor, then defect density increases and recombination rate of carriers becomes dominant in absorber layer which determine the Voc of the solar cell [32].…”