2016
DOI: 10.1039/c6cp05401c
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Investigation of novel crystal structures of Bi–Sb binaries predicted using the minima hopping method

Abstract: Semi-conducting alloys BiSb have emerged as a potential candidate for topological insulators and are well known for their novel thermoelectric properties. In this work, we present a systematic study of the low-energy phases of 35 different compositions of BiSb (0 < x < 1) at zero temperature and zero pressure. We explore the potential energy surface of BiSb as a function of Sb concentration by using the ab initio minima hopping structural search method. Even though Bi and Sb crystallize in the same R3[combinin… Show more

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Cited by 45 publications
(68 citation statements)
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“…The polarization can be switched by reversing the direction of the polar displacement of Bi-atoms from the ideal rocksalt sites. 27,28 We find that the energy barrier (∆E) to overcome the transition from the paraelectric phase in R3m symmetry 41 (λ = 0) to the ferroelectric phase in R3m symmetry (λ = ±1) is ∆E = 0.141 eV/f.u. (see figure S5).…”
Section: Fig 3 (Color Online)mentioning
confidence: 99%
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“…The polarization can be switched by reversing the direction of the polar displacement of Bi-atoms from the ideal rocksalt sites. 27,28 We find that the energy barrier (∆E) to overcome the transition from the paraelectric phase in R3m symmetry 41 (λ = 0) to the ferroelectric phase in R3m symmetry (λ = ±1) is ∆E = 0.141 eV/f.u. (see figure S5).…”
Section: Fig 3 (Color Online)mentioning
confidence: 99%
“…We find that E R = 147.3 meV and α R = 10.43 eVÅ for CBB along L-H direction, while E R = 65.9 meV and α R = 4.71 eVÅ for VBT along L-H direction. Further details about the Rashba spin-splitting in this compound can be obtained in Ref 41. In the R3m phase, Bi and Sb atoms are displaced from the ideal rocksalt sites.…”
Section: Fig 3 (Color Online)mentioning
confidence: 99%
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“…No comparison with data measured on the stable GST326 phase is possible as Sittner et al [64] evidenced a very large variability in the measured Seebeck coefficient with annealing temperature. The strong variation of the S with the annealing T could be due to changes in the carrier concentration like in the case of Bi-Sb compounds [65].…”
Section: (Gete) 3 (Sb 2 Te 3 ) (Gst326)mentioning
confidence: 99%
“…The non-linear behavior of the lowest energy acoustic phonon modes near Γ is not exclusive to our system. It has also been observed in other layer materials, as in different stacking configurations for Graphene 85 or KC 8 and Rb 8 86 , BiSb layered structure 87 and it is related to the weak forces between layers and the rigid-layer (in-plane layer) that moves as a rigid unit. 88,89 Nevertheless, the non-linear behavior that we observe is not as abrupt as in the previous mentioned examples, since we have bilayers stacking along the c-axis.…”
mentioning
confidence: 96%