Investigation of Novel Junctionless MOSFETs for Technology Node Beyond 22 nm

Abstract

In this paper, junctionless MOSFETs with un-uniformly doped source/drain and channel regions have been thoroughly investigated. Un-uniformly doped junctionless MOSFET has the same type of dopants in source/drain and channel while the doping level in the source/drain is much higher than that in the channel. Performance of DC, AC and variability of the uniformly doped, un-uniformly doped junctionless and conventional P-N junction MOSFETs featuring a gate length of 16 nm has been obtained by device simulation through Silvaco software package. Compared with uniformly doped junctionless MOSFETs, un-uniformly doped junctionless MOSFETs exhibit significantly improved overall DC and AC performance as well as lower sensitivity to variations of channel thickness. In addition, un-uniformly doped junctionless MOSFETs also demonstrate marginal performance enhancement compared with conventional P-N junction MOSFETs.