2003
DOI: 10.1002/crat.200310019
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Investigation of one‐dimensionally disordered structures of AIIBVI crystals by Monte Carlo technique III. 4H structure with different kinds of stacking faults

Abstract: To investigate one-dimensionally disordered (ODD) structures in close packed (cp) crystals, the Monte Carlo computer simulation technique has been applied. Calculations of diffraction intensity distributions along the 10.L reciprocal lattice row from 4H structure with four different kinds of stacking faults (SFs): growth, deformation, layer displacement and extrinsic fault are presented. In particular, using simple frequency function of fault to fault distances, both random and non-random distributions of SFs … Show more

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Cited by 7 publications
(16 citation statements)
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“…: H, K and L are hexagonal indices. As before previously [5], the crystal is considered to be an ensemble consisting of 500 to 5000 systems; each system being a sequence of N=512 cp layers. The layer sequences are 'grown' in the computer, layer by layer, using a random number generator.…”
Section: Calculation Of Intensity Distributionmentioning
confidence: 99%
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“…: H, K and L are hexagonal indices. As before previously [5], the crystal is considered to be an ensemble consisting of 500 to 5000 systems; each system being a sequence of N=512 cp layers. The layer sequences are 'grown' in the computer, layer by layer, using a random number generator.…”
Section: Calculation Of Intensity Distributionmentioning
confidence: 99%
“…Avr values are multiplied by F o (L)  2 determined, as in the earlier work [5], for Zn 0.7 Cd 0.3 Se. Finally, the intensity is corrected by usual Lorentz-polarisation factor, and to account for the instrumental resolution, the calculated profiles are convoluted with Gaussians'…”
Section: Calculation Of Intensity Distributionmentioning
confidence: 99%
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