moderate UV light is beneficial for human health, however, excessive UV radiation can cause various human diseases as well as strong destruction to the output of crops and the lifespan of buildings. [1b,3a,4] Therefore, an efficient detection of UV radiation is of significant importance in widespread applications, for example, chemical, environmental, and biological analysis or warning, astronomical investigation, and optical communication. [1c,5] For forewarning UV radiation with high-efficiency, a wide variety of UV PDs such as photomultiplier and silicon diode, have been extensively investigated and applied in the past decades. Nevertheless, there are intrinsic imperfections for the present commercial PDs, such as fragile, large volume, and excessive cost, which are obstacles when meeting the growing requirement of miniaturized and reliable UV detection devices for portable or shipped applications. In recent years, the development of semiconductor-based PDs that work according to the photoelectric effect has received great research interest. [1b,3a,6] In this scenario, a delicate selection of suitable materials with efficient morphological, microstructural, and photoelectrical characteristics plays a key role in the construction of PDs with high-performance. Generally, the PDs work following several different physical mechanisms, that is, surface plasma-wave-assisted effect, photoconductive effect, photothermoelectric effect, and photovoltaic effect, which have been systematically demonstrated in the previous report. [7] More recently, a new generation of wide-bandgap semiconductors including the classification of nitrides (GaN, AlN, BN, etc.), carbides (SiC, diamond, etc.), sulfides (ZnS, etc.), oxides (ZnO, Ga 2 O 3 , TiO 2 , etc.), halide perovskites (e.g., CH 3 NH 3 PbCl 3 ), [8] and their combinations, is emerged as the most attractive material candidates for constructing high-performance UV PDs, owing to their unique advantages, for instance low permittivity, high breakdown electric-fields, good thermal conductivity, high electron saturation rates, excellent radiation resistance, and their appropriate spectral range for UV response. [1d] In addition, the photoelectric conversion processes of the semiconductorbased PDs can be generally described by the behaviors of charge carriers, such as their generation, separation, transportation, and extraction. [9] Therefore, any factor that influences the photon-generated carrier behaviors should be the key parameter for further tuning their photodetecting performances. It As a wide-bandgap semiconductor material, titanium dioxide (TiO 2 ), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting-edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and lowcost fabrication, the construction of high-performance photodetectors (PDs) based on TiO 2 nanostructures is ...