2018
DOI: 10.1007/s10854-018-0090-1
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Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications

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Cited by 21 publications
(7 citation statements)
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“…Based on the PL data, the emission mechanism of the Erdoped TiO 2 is proposed in figure 5, in which the dotted line, straight line, wavy arrows, and curved arrows describe the excitations, emissions, non-radiative (NR) relaxations, and energy transfer processes, respectively. In addition, figure 5 also displays the splitting of the Er-ion energy levels due to the host crystal field [39]. Under a 325 nm-induced indirect excitation, known as a down-conversion process, the electrons in the valence band of the TiO 2 matrix are excited to the conduction band, where they eventually accumulate.…”
Section: Resultsmentioning
confidence: 99%
“…Based on the PL data, the emission mechanism of the Erdoped TiO 2 is proposed in figure 5, in which the dotted line, straight line, wavy arrows, and curved arrows describe the excitations, emissions, non-radiative (NR) relaxations, and energy transfer processes, respectively. In addition, figure 5 also displays the splitting of the Er-ion energy levels due to the host crystal field [39]. Under a 325 nm-induced indirect excitation, known as a down-conversion process, the electrons in the valence band of the TiO 2 matrix are excited to the conduction band, where they eventually accumulate.…”
Section: Resultsmentioning
confidence: 99%
“…For UV–vis detection, semiconductors such as CdS, ZnO, and TiO 2 are commonly doped with rare-earth ions to enhance the photodetection performance. Shkir et al prepared Eu-doped CdS thin films by the spray pyrolysis method and investigated their optical and photoelectric properties . By varying the Eu doping concentration from 1 to 5 wt %, the direct bandgap could be tuned from 2.43 to 2.48 eV, which is attributed to electronic interactions between the 4f electrons of Eu and the s and p electrons of CdS.…”
Section: Technological Applicationsmentioning
confidence: 99%
“…Higher Er doping content improves the performance of the device as a diode owing to the removal of O‐related defects. [ 127 ] The Schottky barrier height of N‐doped single TiO 2 NWs is regulated by the implantation concentration, resulting in more effective contact between the NW and the Cr/Au electrode. [ 52b ] The height of the Schottky barrier can be reduced by introducing surface defects under UV light illumination.…”
Section: Microstructural Defects In Nanostructured Tio2mentioning
confidence: 99%