Investigation of optical phonons and electronic properties of group III‐V nitride multi quantum wells by using far infrared magnetoplasmon spectroscopy

Abstract

In this work, the behavior of optical phonons and magnetoplasmon-modes in the doped group III-V Nitride semiconductor multi quantum wells are investigated in the presence of high magnetic fields parallel to the surface of the layers and perpendicular to the propagation direction by using p-and s-polarized infrared magnetoplasmon reflectivity and employing an effective medium approach. Also, the modified random-element isodisplacement model is employed to obtain the vibrational modes of GaNAs and AlGaN ternary alloy with zinc-blend and wurzite structure. The effective carrier mass, the free carrier concentration and the mobility parameters can be quantified upon model analysis of the infrared p-polarized magnetoplasma reflectivity and the infrared Voigt dielectric function. Theoretical results are compared and discussed with the existing far infrared and Raman scattering data.

Investigation of surface and guided wave polariton modes in doped GaN-Al<inf>x</inf>Ga<inf>1&#x2212;x</inf>N multi quantum wells

“…For numerical calculation, phonon frequencies for GaN-Al x Ga 1-x N MQW are calculated using a modified random element iso-displacement (MREI) model which extended for multilayer [1] and for GaAs/AlGa 1-x As MQW by using far infrared spectroscopy [2]. In the long wavelength regime the MQW is described by an effective medium approximation and macroscopic symmetry is uniaxial [3].…”