Investigation of optimum junction depth of InSb Infrared Photodiode

Abstract

Junction depth plays an important role in determining reverse saturation current (IJ and the quantum efficiency 1] of a detector. In order to reduce the I" and increase the 1]. the thickness of p-type region is made as thin as possible. To evaluate the effect of junction depth on quantum e f ficiency and reverse saturation current we calculated the efficiency and fabricate InSb PV detector, and the effect of junction depth on performance of this type of detector acquired.