Investigation of p-n junctions in the emission electron microscope EF-6

Abstract

The emission microscope EF‐6 of VEB Carl Zeiss was used to locate p‐n junctions in p‐ and n‐type silicon. Basic questions of the imaging method were investigated. Density curves were obtained from photographs of a model capacitor. From the half‐widths of these curves an empirical relation could be derived by means of which it can be determined quantitatively which influence the surface states have on the width of the space charge region of p‐n junctions. The technique is shown to be suitable for the determination of the width of the space charge region on the surface of p‐n junctions. Using this research method it is also possible to demonstrate inversion layers on the surface of p‐n junctions. Results from literature are discussed.