Investigation of pattern-orientation on stress in GaN grown on Si(111) substrate in lateral confinement epitaxy

Tan, Xiaoyu; Ji, Xiaoli; Wei, Tongbo; Li, Xilin; Wei, Xianhua; Wang, Junxi; Li, Jinmin

doi:10.1016/j.spmi.2018.07.023

Cited by 4 publications

(1 citation statement)

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“…Si has many advantages as the substrate of GaN material, such as better crystallinity, large size, low cost, easy processing, good electrical conductivity, thermal conductivity and thermal stability and easy to make integrated circuits. But it is difficult to grow high-quality GaN epitaxial layer on Si substrate since there is a huge lattice mismatch and thermal mismatch between GaN and Si, this will cause cracks in the GaN epitaxial layer during the cooling process [4]. Because ZnO and GaN have the same lattice hexagonal wurtzite structure and the little lattice mismatch and thermal mismatch, ZnO can be used as a buffer layer for the growth of GaN thin films [5].…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Property of High Quality GaN Thin Film on Si with ZnO Buffer Layer

He¹,

Shen²,

Wei³

2019

JPMT

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A method was applied to improve the crystallization quality of GaN. ZnO thin films were deposited on n-Si (111) at 600°C by pulsed laser deposition (PLD), and GaN thin films were grown on Si or ZnO/ Si by R. F. magnetron sputtering system. Several GaN films were prepared with ZnO as buffer layer without annealing, with ZnO as buffer layer annealed at 850°C, 900°C and 950°C and with no buffer layer annealed at 950°C, respectively. The crystallization, optical property and morphology of all GaN films prepared were studied by X-ray diffraction (XRD), Fourier transform infrared spectrophotometer (FTIR), photoluminescence (PL) and scanning electron microscope (SEM). The results show that ZnO buffer layer plays an important role in improving the crystallization quality of GaN.

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Section: Introductionmentioning

confidence: 99%