Investigation of PDA process to improve electrical characteristics of HfO&lt;inf&gt;x&lt;/inf&gt;N&lt;inf&gt;y&lt;/inf&gt; High-k dielectric formed by ECR plasma oxidation of HfN

Ohmi, Shun–ichiro; Nakano, Yusuke

doi:10.1109/issm.2007.4446875

Cited by 5 publications

(3 citation statements)

References 18 publications

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“…Then, 10 nm-thick metallic-phase HfN 0.5 gate electrode ( HfN : 4.8 eV) was in-situ deposited on HfN 1.3 (I) using Ar/N 2 gas flow ratio of 10/0.2 sccm (N 2 : 2%, 0.09 Pa). The µ-wave/RF power was 500/400 W. The PMA was carried out at 500°C/10 min in N 2 /4.9%H 2 FG ambient (1 SLM) by silicon-wafer-covering (SWC) process utilizing rapid thermal annealing (RTA) system [14].…”

Section: Methodsmentioning

confidence: 99%

Investigation of bilayer HfN<sub>x</sub> gate insulator utilizing ECR plasma sputtering

Atthi

Ohmi

2016

IEICE Electron. Express

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In this paper, we have investigated bilayer HfN x gate insulator utilizing ECR plasma sputtering especially for the electrical properties with metallic-phase HfN 0.5 gate electrode which was formed by in-situ process. After PMA of 500°C/10 min in N 2 /4.9%H 2 ambient, the bilayer of HfN 1.3 (1.7 nm)/HfN 1.1 (0.9 nm) gate insulator formed on Si(100) showed the EOT of 0.61 nm, leakage current density (@V FB −1 V) of 5.5 × 10 −3 A/cm 2 and density of interface states (D it) of 5.5 × 10 11 cm −2 eV −1. The n-MISFET with bilayer HfN x gate insulator exhibited saturation mobility (μ sat) of 47 cm 2 /(V s), which higher than the device with directly deposited HfN 1.3 gate insulator. HfN x interfacial layer (IL) with low nitrogen concentration was found to significantly improve the interface properties of HfN x gate stacks.

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Section: Methodsmentioning

confidence: 99%

Investigation of bilayer HfN<sub>x</sub> gate insulator utilizing ECR plasma sputtering

Atthi

Ohmi

2016

IEICE Electron. Express

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“…In contrast, for HfN oxidation, HfN (5 nm) was deposited at 0.15, 0.17, and 0.19 Pa by adjusting Ar/N 2 flow rate (20/0.8, 22.5/0.9, and 25/1 sccm, respectively) and oxidized at 0.18 Pa (Ar/O 2 flow rate of 20/8 sccm, m-wave power of 500 W) for 15 -60 s. Postdeposition annealing (PDA) was performed by silicon-wafer-covering rapid thermal annealing (SWC-RTA) at 800 C for 1 min in N 2 ambient. 14) The Al electrodes were evaporated onto the samples through a shadow mask (: 100 mm). The fabricated MOS diodes were characterized by capacitance-voltage (C-V) and current-voltage (J-V) methods.…”

Section: Methodsmentioning

confidence: 99%

HfO_xN_y Thin-Film Formation on Three-Dimensional Si Structure Utilizing Electron Cyclotron Resonance Sputtering

Sano¹,

Ohmi²

2009

jjap

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HfO x N y thin-film formation on three-dimensional (3D) Si structures by electron cyclotron resonance (ECR) plasma sputtering was investigated. The sputtering conditions, particularly deposition pressure, and the process of HfO x N y formation, were optimized to prepare uniform films with good electrical properties. It was found that an increase in pressure during HfN deposition from 0.15 to 0.19 Pa improved the step coverage of the HfO x N y film in the sidewall region. Two different processes of HfO x N y thin-film formation using ECR plasma sputtering, namely, HfO 2 nitridation and HfN oxidation, were investigated to obtain uniform coverage by optimizing the deposition conditions. However, the interfacial layer (IL) growth was enhanced, which increased equivalent oxide thickness (EOT) in the case of HfO 2 nitridation. This problem was mitigated by HfN oxidation even for 3D structures. EOTs of 0.94 and 1.7 nm were obtained for the planar HfO x N y /Si and 3D HfO x N y /Si structures, respectively.

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“…Next, post deposition annealing (PDA) was carried out at 600°C/1 min in N 2 ambient by Si wafer covering (SWC) process utilizing rapid thermal annealing system (RTA) [15]. Finally, Al contact layer was ex-situ deposited by evaporation, and gate electrode patterning was carried out for Al/HfN 0.5 to fabricate MONOS diode structures as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

In-situ formation of Hf-based MONOS structures for non-volatile memory applications

Ohmi

Liu

2015

IEICE Electron. Express

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Fully in-situ formation of Hf-based metal-oxide-nitride-oxidesilicon (MONOS) structures utilizing electron-cyclotron-resonance (ECR) plasma sputtering was investigated for the first time. It was found that the MONOS structures with in-situ formed HfN 0.5 gate electrode showed faster programing, high injection efficiency and larger flat-band voltage (V FB ) shift of 2.5 V compared to the MONOS structure with ex-situ formed Al gate electrode under programing voltage of 10 V. The retention characteristics of MONOS structure with in-situ formed HfN 0.5 gate electrode were also superior to the MONOS structure with ex-situ formed Al gate electrode. The degradation of retention for V FB shift after 60 min of programing was 40% for the MONOS structure with ex-situ formed Al gate electrode, while it was 16% for the MONOS structure with in-situ formed HfN gate electrode.

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Investigation of PDA process to improve electrical characteristics of HfO<inf>x</inf>N<inf>y</inf> High-k dielectric formed by ECR plasma oxidation of HfN

Cited by 5 publications

References 18 publications

Investigation of bilayer HfN<sub>x</sub> gate insulator utilizing ECR plasma sputtering

Investigation of bilayer HfN<sub>x</sub> gate insulator utilizing ECR plasma sputtering

HfO_xN_y Thin-Film Formation on Three-Dimensional Si Structure Utilizing Electron Cyclotron Resonance Sputtering

In-situ formation of Hf-based MONOS structures for non-volatile memory applications

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Investigation of PDA process to improve electrical characteristics of HfO<inf>x</inf>N<inf>y</inf> High-k dielectric formed by ECR plasma oxidation of HfN

Cited by 5 publications

References 18 publications

Investigation of bilayer HfN<sub>x</sub> gate insulator utilizing ECR plasma sputtering

Investigation of bilayer HfN<sub>x</sub> gate insulator utilizing ECR plasma sputtering

HfOxNy Thin-Film Formation on Three-Dimensional Si Structure Utilizing Electron Cyclotron Resonance Sputtering

In-situ formation of Hf-based MONOS structures for non-volatile memory applications

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HfO_xN_y Thin-Film Formation on Three-Dimensional Si Structure Utilizing Electron Cyclotron Resonance Sputtering