Investigation of pH sensor based on liquid-solid dual-gated IGZO thin-film transistor

Cai, Guolong; Yang, Peng; Wang, Xinzhong; Pei, Yanli; Wang, Gang

doi:10.1088/2053-1591/ab2c93

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…Sensors can detect the light, force, voice, gas, humidity et al and transfer them into electrical signal. At present, sensors have been applied in industrial manufacture, healthcare monitoring [123] , food safety [124] , artificial electronic skins and so on. IGZO-based TFTs are compatible with semiconductor integrated circuit technology and they possess the advantages of small size, room-temperature fabrication process and sensitivity to the pH, pressure, light, gas and so on [16, 20, 22, 23, 25, 125−128] , which meet with the requirements of the sensors.…”

Section: Sensor Applicationsmentioning

confidence: 99%

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Zhu

Jiang

et al. 2021

J. Semicond.

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Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance, large-area uniformity, and low processing temperature. This article reviews the recent progress and major trends in the field of IGZO-based TFTs. After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs, an overview of IGZO materials and IGZO-based TFTs is given. In this part, IGZO material electron travelling orbitals and deposition methods are introduced, and the specific device structures and electrical performance are also presented. Afterwards, the recent advances of IGZO-based TFT applications are summarized, including flat panel display drivers, novel sensors, and emerging neuromorphic systems. In particular, the realization of flexible electronic systems is discussed. The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future.

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Section: Sensor Applicationsmentioning

confidence: 99%

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Zhu

Jiang

et al. 2021

J. Semicond.

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“…For example, SiO 2 and Si 3 N 4 -gated ISFETs [18,19] exhibit non-uniform sensitivity responses to variations in pH levels. The Al 2 O 3 layer [20][21][22] tends to detach after prolonged contact with the test liquid, while the IGZO layer [23,24] demonstrates pronounced susceptibility to corrosion in alkaline environments. Additionally, Ta 2 O 5 [18,25] displays considerable sensitivity to light.…”

Section: Introductionmentioning

confidence: 99%

Effect of Microwave Annealing on the Sensing Characteristics of HfO2 Thin Film for High Sensitive pH-EGFET Sensor

Cui,

Yang,

Zhang

et al. 2023

Micromachines

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Recently, certain challenges have persisted in PH sensor applications, especially when employing hafnium oxide (HfO2) thin films as sensing layers, where issues related to sensitivity, hysteresis, and long-term stability hamper performance. Microwave annealing (MWA) technology, as a promising solution for addressing these challenges, has gained significant attraction due to its unique advantages. In this article, the effects of microwave annealing (MWA) treatment on the sensing behaviors of Extended-Gate Field-Effect Transistors (EGFETs) utilizing HfO2 as a sensing film have been investigated for the first time. Various power levels of MWA treatment (1750 W/2100 W/2450 W) were selected to explore the optimal processing conditions. A thorough physical analysis was conducted to characterize the surface of the MWA-treated HfO2 sensing thin film using techniques such as X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Our findings reveal that MWA treatment effectively increased the surface sites (Ns) in the HfO2 sensing thin film, consequently leading to an increase in the pH sensitivity of EGFETs to 59.6 mV/pH, as well as a reduction in hysteresis and an enhancement in long-term stability. These results suggest that MWA offers a straightforward, energy-efficient method to enhance overall HfO2 sensing film performance in EGFETs, offering insights for HfO2 applications and broader microelectronics challenges.

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Flexible and stretchable indium-fallium-zinc oxide-based electronic devices for sweat pH sensor application

Kumaresan

Nirmal

Poola

2022

Metal Oxides for Biomedical and Biosensor Applications

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Investigation of pH sensor based on liquid-solid dual-gated IGZO thin-film transistor

Cited by 4 publications

References 19 publications

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

Effect of Microwave Annealing on the Sensing Characteristics of HfO2 Thin Film for High Sensitive pH-EGFET Sensor

Flexible and stretchable indium-fallium-zinc oxide-based electronic devices for sweat pH sensor application

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