Investigation of Photoluminescence and Optoelectronics Properties of Transition Metal-Doped ZnO Thin Films

Abstract

Thin films of zinc oxide (ZnO) doped with transition metals have recently gained significant attention due to their potential applications in a wide range of optoelectronic devices. This study focuses on ZnO thin films doped with the transition metals Co, Fe, and Zr, exploring various aspects of their structural, morphological, optical, electrical, and photoluminescence properties. The thin films were produced using RF and DC co-sputtering techniques. The X-ray diffraction (XRD) analysis revealed that all the doped ZnO thin films exhibited a stable wurtzite crystal structure, showcasing a higher structural stability compared to the undoped ZnO, while the atomic force microscopy (AFM) imaging highlighted a distinctive granular arrangement. Energy-dispersive X-ray spectroscopy was employed to confirm the presence of transition metals in the thin films, and Fourier-transform infrared spectroscopy (FTIR) was utilized to investigate the presence of chemical bonding. The optical characterizations indicated that doping induced changes in the optical properties of the thin films. Specifically, the doped ZnO thin film’s bandgap experienced a significant reduction, decreasing from 3.34 to 3.30 eV. The photoluminescence (PL) analysis revealed distinguishable emission peaks within the optical spectrum, attributed to electronic transitions occurring between different bands or between a band and an impurity. Furthermore, the introduction of these transition metals resulted in decreased resistivity and increased conductivity, indicating their positive influence on the electrical conductivity of the thin films. This suggests potential applications in solar cells and light-emitting devices.

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“…In ZnO, the emission of excitons (bound electron-hole pairs) near the band edge (NBE) in the ultraviolet region (around 380-390 nm) originates from the recombination of free excitons. [110] Doping ZnO thin films with transition metals (Co, Fe, Zr) has been shown to enhance structural stability and create unique granular arrangements. [87] Structural analyses employing X-ray diffraction (XRD) and atomic force microscopy (AFM) can validate metal doping in the ZnO lattice.…”

“…This decrease in bandgap energy significantly influences their light absorption capabilities, affecting electronic transitions within the material. [110] Figure 9 illustrates the near-band-edge emission of ZnO in the UV region, highlighting its characteristic optical features. Studying photoluminescence helps elucidate the complex interplay between transition metal modification and the properties of ZnO thin films.…”

“…Material properties are precisely controlled through techniques like RF and DC co-sputtering. [110] Studying photoluminescence (PL) in ZnO thin films provides valuable insights. Emissions in the green and yellow regions of the light spectrum arise from defects within the ZnO crystal lattice and offer information about these defects.…”

“…This approach has the Investigates thin films of zinc oxide (ZnO) photoluminescence properties of the doped with the transition metals Co, Fe, and Zr ZnO thin films, Adopted with permission from. [110] potential to improve ZnO's applicability in environmental remediation and other areas.…”

“…Figure 9.Investigates thin films of zinc oxide (ZnO) photoluminescence properties of the doped with the transition metals Co, Fe, and Zr ZnO thin films, Adopted with permission from [110]. …”