Investigation of photoluminescence emission from β-Ga2O3: Ce thin films deposited by spray pyrolysis technique

Raphael, Rakhy; Anila, E.I.

doi:10.1016/j.jallcom.2021.159590

Cited by 16 publications

(3 citation statements)

References 17 publications

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“…The spray pyrolysis technique is attractive because it is cost-effective, with an easy experimental setup, and it allows wide-area deposition, etc. [4,10]. Zinc oxide is an n-type semiconductor with a wide band gap, high free exciton binding energy (60 meV), wide range of resistivity values and high transparency in the visible region [1].…”

Section: Introductionmentioning

confidence: 99%

Molybdenum-Doped ZnO Thin Films Obtained by Spray Pyrolysis

Bancheva-Koleva,

Zhelev,

Petkov

et al. 2024

Materials

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A batch of ZnO thin films, pure and doped with molybdenum (up to 2 mol %), were prepared using the spray pyrolysis technique on glass and silicon substrates. The effect of molybdenum concentration on the morphology, structure and optical properties of the films was investigated. X-ray diffraction (XRD) results show a wurtzite polycrystalline crystal structure. The average crystallite size increases from 30 to 80 nm with increasing molybdenum content. Scanning electron microscopy (SEM) images demonstrate a smooth and homogeneous surface with densely spaced nanocrystalline grains. The number of nuclei increases, growing over the entire surface of the substrate with uniform grains, when the molybdenum concentration is increased to 2 mol %. The estimated root mean square (RMS) roughness values for the undoped and doped with 1 mol % and 2 mol % of ZnO thin films, defined by atomic force microscopy (AFM), are 6.12, 23.54 and 23.83 nm, respectively. The increase in Mo concentration contributes to the increase in film transmittance.

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Section: Introductionmentioning

confidence: 99%

Molybdenum-Doped ZnO Thin Films Obtained by Spray Pyrolysis

Bancheva-Koleva,

Zhelev,

Petkov

et al. 2024

Materials

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“…The techniques established for obtaining the β-Ga 2 O 3 layers include, for instance, chemical vapor deposition [10], plasma-enhanced chemical vapor deposition [11,12], electron beam deposition [7], molecular beam epitaxy [13], pulsed laser deposition [14], radio-frequency magnetron sputtering [15], sol-gel [16], and hydro-and solvothermal methods [17][18][19]. However, low-cost techniques, such as ultrasonic nebulization and spray coating, are only represented in a few studies [20][21][22][23][24][25][26][27][28][29][30][31][32]. The latest reviews about β-Ga 2 O 3 rarely consider spray pyrolysis as a deposition method [1,33,34].…”

Section: Introductionmentioning

confidence: 99%

The Influence of Process Parameters on the Microstructural Properties of Spray-Pyrolyzed β-Ga2O3

et al. 2023

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In this work, the deposition of β-Ga2O3 microstructures and thin films was performed with Ga(NO3)3 solutions by ultrasonic nebulization and spray coating as low-cost techniques. By changing the deposition parameters, the shape of β-Ga2O3 microstructures was controlled. Micro-spheres were obtained by ultrasonic nebulization. Micro-flakes and vortices were fabricated by spray coating aqueous concentrated and diluted precursor solutions, respectively. Roundish flakes were achieved from water–ethanol mixtures, which were rolled up into tubes by increasing the number of deposition cycles. Increasing the ethanol-to-water ratio allows continuous thin films at an optimal Ga(NO3)3 concentration of 0.15 M and a substrate temperature of 190 °C to be formed. The monoclinic β-Ga2O3 phase was achieved by thermal annealing at 1000 °C in an ambient atmosphere. Scanning electronic microscopy (SEM), X-ray diffraction (XRD), and UV-Raman spectroscopy were employed to characterize these microstructures. In the XRD study, in addition to the phase information, the residual stress values were determined using the sin2(ψ) method. Raman spectroscopy confirms that the β-Ga2O3 phase and relative shifts of the Raman modes of the different microstructures can partially be assigned to residual stress. The high-frequency Raman modes proved to be more sensitive to shifting and broadening than the low-frequency Raman modes.

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“…Ga 2 O 3 owns five different crystal phases, and the orthorhombic β‐Ga 2 O 3 structure is primarily due to its high thermal and chemical stability compared to its other polymorphs. There have been many epitaxial techniques to grow β‐Ga 2 O 3 films such as molecular beam epitaxy, 13 spray pyrolysis, 14 sol‐gel methods, 15 electron beam evaporation, 16 vacuum thermal evaporation, 17 radio‐frequency (RF) magnetron sputtering, 18 plasma‐enhanced atomic layer deposition (PEALD), 19 and pulsed laser deposition (PLD). Due to the low growth temperature, high growth rate, and completely compositional consistency between target and grown film, PLD has been widely used to grow β‐Ga 2 O 3 films 20–24 .…”

Section: Introductionmentioning

confidence: 99%

Annealing temperature controlled crystallization mechanism and properties of gallium oxide film in forming gas atmosphere

Wang

Fan

et al. 2022

J Am Ceram Soc.

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Gallium oxide (Ga2O3) films had been fabricated on Al2O3(0001) substrate by employing pulsed laser deposition (PLD) and annealed at different temperatures under forming gas (FG) atmosphere (95% N2 + 5% H2). The influence of annealing temperature on the structural, optical, chemical composition, and surface morphological properties of the Ga2O3 thin films was investigated comprehensively. The annealing processes with hydrogen gas play a crucial role in the characteristics of Ga2O3 thin films. A crystallization mechanism of Ga2O3 films controlled by annealing temperature has been proposed firstly and analyzed systematically, which contains three kinds of competitive mechanism, namely the thermal enhanced crystallization, the enhanced H2 dissociative adsorption on Ga2O3 surfaces, and the high‐temperature decomposition of Ga2O3. Both Ga+ and Ga3+ oxidation valence states were presented in all samples, which indicated lattice oxygen deficiency in Ga2O3 films. The variation of the non‐lattice oxygen proportion of Ga2O3 films related to the crystallization mechanism firstly increased and then decreased with the increase of annealing temperature. The detailed crystallization mechanism of PLD‐Ga2O3 films annealed in FG offers a guideline and references for the further fabrication of high‐quality Ga2O3 films and their applications in high‐performance devices.

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Investigation of photoluminescence emission from β-Ga2O3: Ce thin films deposited by spray pyrolysis technique

Cited by 16 publications

References 17 publications

Molybdenum-Doped ZnO Thin Films Obtained by Spray Pyrolysis

Molybdenum-Doped ZnO Thin Films Obtained by Spray Pyrolysis

The Influence of Process Parameters on the Microstructural Properties of Spray-Pyrolyzed β-Ga2O3

Annealing temperature controlled crystallization mechanism and properties of gallium oxide film in forming gas atmosphere

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