Investigation of Polishing Pads Impregnated with Fe and Al2O3 Particles for Single-Crystal Silicon Carbide Wafers

Ho, Jihng-Kuo; Huang, Chien-Kang; Tsai, Ming-Yi; Tsai, Che-Cheng

doi:10.3390/app6030089

Cited by 13 publications

(2 citation statements)

References 12 publications

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“…On the other hand, fixed abrasive pads (FAP) have been gradually applied to polishing silicon carbide substrates [17][18][19][20][21][22][23]. A kind of FAP made of Fe, Al 2 O 3 , and diamond was prepared by Ho et al [20] to polish single-crystal silicon carbide substrates with a 20 wt% H 2 O 2 polishing slurry at a pH of 4, obtaining an MRR of 0.74 m/h.…”

Section: Introductionmentioning

confidence: 99%

Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad

et al. 2023

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4H-SiC wafers are more likely to sustain a lower material removal rate (MRR) and severe subsurface damage in conventional chemical mechanical polishing (CMP) methods. To overcome the material removal bottleneck imposed by aqueous chemistry, a high-efficiency polishing of 4H-SiC wafers method by applying reactive nonaqueous fluids to self-sharpening fixed abrasive pads has been proposed in our former research works. Furthermore, to improve the material removal rate and reduce the surface roughness Sa value of 4H-SiC substrates of the Si face, the effect of organic acid, H2O2, and Triton X-100 in nonaqueous slurry on 4H-SiC polishing was investigated. The MRR of 12.83 μm/h and the Sa of 1.45 nm can be obtained by the orthogonally optimized slurry consisting of 3 wt% H2O2, 0.5 wt% Triton X-100 at pH = 3. It is also found that the addition of different levels of oxidant H2O2 and surfactant Triton X-100 components not only increased the MRR of the 4H-SiC substrates of the Si face but also achieved a lower Sa value; in that, the polishing efficiency of the Si side of the 4H-SiC wafers and the surface quality of the 4H-SiC wafers could be effectively improved by the optimization of the polishing slurry.

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Section: Introductionmentioning

confidence: 99%

Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad

et al. 2023

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“…In this study, polyurethane (PU) sheet with rough surface was used as a non-mesh polymer sheet. The PU sheet was developed as a polishing pad (Ho et al, 2016;Budinger, 1990) for hard disks and compact disks. Another reason why the PU sheet was chosen is the ease to detect morphological change upon the electrospinning and to evaluate surface mechanical properties.…”

Section: Introductionmentioning

confidence: 99%

Direct Electrospinning of Cellulose Acetate onto Polyurethane Sheet and Effect of Its Saponification on Mechanical Properties

Ali

Pakkang

Taira

et al. 2019

Journal of Wood Chemistry and Technology

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This paper demonstrates direct electrospinning of two kinds of cellulose acetate, water-soluble cellulose acetate (WSCA) and cellulose diacetate (CDA), onto a non-conductive synthetic polymer sheet to modify its surface morphology. Polyurethane (PU) sheets for polishing compact and hard disks were used as an example of synthetic polymer sheet. The direct electrospinning of WSCA 11 wt.% in aqueous ethanol solution (40 wt.%) and CDA 9 wt.% in aqueous acetone solution (90 wt.%), were carried out by spraying anti-static agent onto the sheet. However, the electrospun fibers were easily peeled off from the PU sheet. Tight fixation of the fibers was achieved by spraying a 50 wt.% of dimethylformamide/ethanol solution additionally during the spinning.Finally, the cellulose acetate fibers on the PU sheet were converted to regenerated cellulose fibers by leaving the fibers in an ammonia atmosphere for complete saponification. Change in surface morphology was evaluated by tribology test in addition to microscopic observations. Friction coefficient of PU sheet was dramatically decreased with increasing the amount of WSCA and CDA fibers deposited, suggesting that the PU sheet surface became smoother. Most of friction coefficients of the sheet were slightly increased by saponification, except for that of the PU sheet with increased amount of WSCA fibers, which might be attributed to the change in the elasticity upon saponification.

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Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Wang

et al. 2023

Adv Materials Inter

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Abstract4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC wafers. Enhancing the performance of CMP is critical to improving the surface quality and reducing the processing cost of 4H‐SiC wafers. In this review, the superior properties of 4H‐SiC and the processing of 4H‐SiC wafers are introduced. The development of CMP with chemical, mechanical, and chemical–mechanical synergistic approaches to improve the performance of CMP is systematically reviewed. The basic principle and processing system of each improvement approach are presented. By comparing the material removal rate of CMP and the surface roughness of CMP‐treated 4H‐SiC wafers, the prospect on the chemical, mechanical, and chemical–mechanical synergistic improvement approaches is finally provided.

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Investigation of Polishing Pads Impregnated with Fe and Al2O3 Particles for Single-Crystal Silicon Carbide Wafers

Cited by 13 publications

References 12 publications

Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad

Influences of Nonaqueous Slurry Components on Polishing 4H-SiC Substrate with a Fixed Abrasive Pad

Direct Electrospinning of Cellulose Acetate onto Polyurethane Sheet and Effect of Its Saponification on Mechanical Properties

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

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