Investigation of polytetrafluorethylene surface texture

Gorokhovskii, G. A.; Agulov, I. I.

doi:10.1007/bf00860692

Cited by 2 publications

(1 citation statement)

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“…This is because, low elastic modulus increases the mobility of the molecules to flow in viscous manner due to less strong inter-molecular bonding. Thus, the relaxation time for larger contact area decreases with decreasing elastic modulus 37 and hence the film is prone to damage because of thermal effect. Thus, the polymer film is easily removed from the sliding track due to thermal and time dependent changes in the elastic modulus of the film and the wear life of Si/UHMWPE is shorter than that of Si/DLC/UHMWPE.…”

Section: Discussionmentioning

confidence: 99%

TRIBOLOGY OF UHMWPE THIN FILMS ON Si WITH INTERFACIAL LAYERS AND MODIFICATIONS

Minn¹,

Sinha²

2009

Polymer Tribology

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This chapter presents the strategies to improve the friction and wear properties of UHMWPE thin film on Si substrate by suitable interfacial modifications. Firstly, hard DLC was used as an intermediate layer in order to increase the load carrying capacity of the polymer film. As a result, the contact area decreased and the wear life of the composite film, Si/DLC/UHMWPE increased significantly. After investigating the effect of UHMWPE thickness on the tribological properties of Si/DLC/UHMWPE, it is found that there is an optimum range of thickness of the polymer film that shows the best friction and wear performance of this composite film. Secondly, Si substrates were modified with different surface energies that could determine the adhesion strength of UHMWPE film to the substrates. The two extreme conditions, the most hydrophilic, 21º and the most hydrophobic, 104º showed much lower wear resistance when compared with moderate surface wettability. It is concluded that the wear performance of UHMWPE thin films on Si substrate could be extended by several orders of magnitude by suitably using a hard interface layer and by modifying the interfaces for different surface energies of the Si substrate.

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Section: Discussionmentioning

confidence: 99%