Investigation of rare-earth aluminates as alternative trapping materials in Flash memories

Cacciato, A.; Suhane, A.; Richard, Olivier; Arreghini, A.; Adelmann, Christoph; Swerts, J.; Rothschild, A.; bosch, G. Van den; Breuil, L.; Bender, Hugo; Jurczak, M.; Debusschere, I.; Kittl, Jorge; Houdt, J. Van

doi:10.1109/essderc.2010.5618186

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2011

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“…to suppress silicate formation with the SiO 2 tunnel oxide. 23 Indeed, the usage of thin Si 3 N 4 interlayers between GdAlO 3 and SiO 2 was found to suppress silicate formation and induced crystallization of GdAlO 3 into the hexagonal phase as shown in Fig. 9.…”

Section: Resultsmentioning

confidence: 94%

Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects

Adelmann

Swerts

Richard

et al. 2011

J. Electrochem. Soc.

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The lanthanide aluminates GdAlO 3 and LuAlO 3 have been examined for integration into advanced non-volatile memory devices. From a materials point of view, a number of physical properties of the material need to be understood prior to successful device integration, such as e.g. band gap, dielectric permittivity, or crystallization behavior. In addition to these material properties, the layers may have to withstand high thermal budgets during device processing such that thermal stability and interdiffusion in contact with surrounding materials become important.

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Section: Resultsmentioning

confidence: 94%