Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Wu, Tian-Li; Tang, Shun-Wei; Jiang, Hong-Jia

doi:10.3390/mi11020163

Cited by 16 publications

(7 citation statements)

References 24 publications

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“…But HEMT and MOSHEMT based devices suffer from high contact and high on-resistance due to metallic ohmic contacts and significant source/drain distance. However, the modified gate structure reduces the gate resistance while maintaining the modified gate length and reduced the gate capacitance [13][14][15][16][17]. Generally, AlGaN/GaN HEMTs are normally-on devices and operates in depletion mode.…”

Section: Introductionmentioning

confidence: 99%

RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate

Khan

Jena

Routray

et al. 2022

Silicon

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In this article, the Authors have demonstrated and analyzed various analog/RF and linearity performance of a AlGaN/GaN gate recessed MOSHEMT (GR-MOSHEMT) grown on a Si substrate with mathematical modeling based TCAD simulation. Specifically, a Al2O3 dielectric GR-MOSHEMT has shown tremendous potential in terms of AC/DC figure of merits (FOM's) such as low leakage current, high transconductance, high Ion/Ioff current ratio and excellent linear properties corresponding to conventional AlGaN/GaN HEMT and MOSHEMT. The figure-of-merit metrics such as VIP2, VIP3, IIP3 and IDM3 are performed for different drain to source voltages (VDS) of 2.5V, 5V and 10V. All the modeling and simulation results are generated by Commercial Silvaco TCAD and found to be satisfactory in terms of high frequency and power applications. The present GR-MOSHEMT device shows a superior performance with a threshold voltage of 0.5V, Current density of 888 mA, high transconductance of 225 mS/mm and high unit gain cut-off frequency of 0.91GHz. The results of the developed AlGaN/GaN GR-MOSHEMT considerably improves the device performance and also suitable for high power distortion less RF applications.

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Section: Introductionmentioning

confidence: 99%

RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate

Khan

Jena

Routray

et al. 2022

Silicon

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“…GaN-based high electron mobility transistors (HEMTs) are good candidates for high frequency and high efficiency power switching applications owing to their attractive superiorities of high breakdown electric field and high saturation electron velocity [ 1 ]. Normally-off property is strongly required for GaN devices used in the power electronics systems.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of All-GaN Integrated MIS-HEMTs with High Threshold Voltage Stability Using Supercritical Technology

et al. 2021

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In this paper, a novel method to achieve all-GaN integrated MIS-HEMTs in a Si-CMOS platform by self-terminated and self-alignment process is reported. Furthermore, a process of repairing interface defects by supercritical technology is proposed to suppress the threshold voltage shift of all GaN integrated MIS-HEMTs. The threshold voltage characteristics of all-GaN integrated MIS-HEMTs are simulated and analyzed. We found that supercritical NH3 fluid has the characteristics of both liquid NH3 and gaseous NH3 simultaneously, i.e., high penetration and high solubility, which penetrate the packaging of MIS-HEMTs. In addition, NH2− produced via the auto coupling ionization of NH3 has strong nucleophilic ability, and is able to fill nitrogen vacancies near the GaN surface created by high temperature process. The fabricated device delivers a threshold voltage of 2.67 V. After supercritical fluid treatment, the threshold voltage shift is reduced from 0.67 V to 0.13 V. Our demonstration of the supercritical technology to repair defects of wide-bandgap family of semiconductors may bring about great changes in the field of device fabrication.

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“…It was already demonstrated that the combination of these two approaches ('gate recess' and 'gate oxide') leads to a further device performance improvement [6,[48][49][50][51][52][53][54][55]. Furthermore, extensive studies have been performed on the influence of material growth, layer design and processing technology on device performance, however little attention was paid to the effects of the amorphous dielectric AlN layer in gate recessed MISHFET AlGaN/GaN structures on strain as well as on the electrical characteristics.…”

Section: Introductionmentioning

confidence: 99%

Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Mikulics

Kordoš

Gregušová

et al. 2021

Semicond. Sci. Technol.

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We fabricated and characterized metal insulator semiconductor (MIS) structures by applying amorphous AlN thin layers as a dielectric in gate recessed AlGaN/GaN heterostructure field effect transistors (HFETs). Micro photoluminescence measurements performed on MISHFET devices reveal a local non-uniform distribution of strain in the source—gate recess—drain region. Furthermore, a reduction of compressive stress up to 0.3 GPa in GaN after gate recessing was experimentally determined. The local stress increases by ∼0.1 GPa and ∼0.2 GPa after the deposition of 4 and 6 nm thin AlN layers in the gate recessed structures, respectively. Additionally, an increase in sheet charge density in the devices under investigation from ∼ 3.8 × 10 12 c m − 2 to ∼ 6.2 × 10 12 c m − 2 was evaluated by capacitance–voltage measurements. Therefore, strain engineering by applying amorphous AlN layers in gate recessed MISHFETs can significantly improve their device characteristics.

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Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Cited by 16 publications

References 24 publications

RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate

RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate

Fabrication of All-GaN Integrated MIS-HEMTs with High Threshold Voltage Stability Using Supercritical Technology

Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

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