Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density

Abstract

Abstract. We studied temperature dependences of the resistivity,   T c

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN

“…There are no other data on parameters of ohmic contacts to AlN in the above papers. In [9,10] a possibility of formation of ohmic contact to highresistance n-AlN film grown on a heavily doped n + -4H-SiC substrate was shown as well as temperature dependence of contact resistivity, ρ c (T), was measured. A high density of structural defects was observed in the near-contact region of n-AlN grown on a n + -4H-SiC substrate, just as in ohmic contacts to n-GaN grown on sapphire.…”