Investigation of Ru-doped Sb2Te alloy for high-speed and good thermal stability phase change memory applications

Tan, Zhilong; Zhao, Zong‐Yan; Wen, Ming; Guo, Junming; Chen, Jialin; Wu, Xiaofei; Song, Zhihao

doi:10.1007/s10854-021-06581-3

Cited by 7 publications

(2 citation statements)

References 11 publications

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“…In fact, the as-deposited RuSbTe film shows an amorphous phase, as demonstrated in the following section. Moreover, because Ru doping significantly enhances the thermal stability of amorphous Sb 2 Te, and GeTe 10 , 11 , a high T x is expected for amorphous RuSbTe. Based on this background, we aimed to develop a stoichiometric ternary RuSbTe material with high thermal stability and optical property modulation upon phase changes for photonic applications.…”

Section: Introductionmentioning

confidence: 99%

Phase-change behavior of RuSbTe thin film for photonic applications with amplitude-only modulation

Hatayama,

Makino,

Saito

2024

Sci Rep

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Ge2Sb2Te5 (GST), the most mature phase-change materials (PCM), functions as a recoding layer in nonvolatile memory and optical discs by contrasting the physical properties upon phase transition between amorphous and crystalline phases. However, GST faces challenges such as a large extinction coefficient (k) and low thermal stability of the amorphous phase. In this study, we introduce RuSbTe as a new PCM to address the GST concerns. Notably, the crystallization temperature of the amorphous RuSbTe is approximately 350 °C, significantly higher than GST. A one-order-of-magnitude increase in the resistivity contrast was observed upon phase transition. The crystalline (0.35–0.50 eV) and amorphous (0.26–0.37 eV) phases exhibit relatively small band gap values, resulting in substantial k. Although RuSbTe demonstrates a k difference of approximately 1 upon crystallization at the telecommunications C-band, the refractive index (n) difference is negligible. Unlike GST, which induces both phase retardation and amplitude modulation in its optical switch device, RuSbTe exhibits amplitude-only modulation. This study suggests that RuSbTe has the potential to enable new photonic computing devices that can independently control the phase and amplitude. Combining RuSbTe with phase-only modulators could open avenues for advanced applications.

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Section: Introductionmentioning

confidence: 99%

Phase-change behavior of RuSbTe thin film for photonic applications with amplitude-only modulation

Hatayama,

Makino,

Saito

2024

Sci Rep

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“…For example, in Ru-doped Sb 2 Te-based PCM, the ten-year data-retention temperature reaches 143 • C, however, the SET speed is as slow as 6000 ps. [7] Interestingly, the laser pulse width as short as picosecond/femtosecond scale has been utilized to perform reversible phase transformation between amorphous and crystalline states. [8,9] The ultrashort laser pulse provides a powerful tool combining thermal processes and photon effects to achieve fast SET/RESET operation speed in PCM.…”

Section: Introductionmentioning

confidence: 99%

Multilevel optoelectronic hybrid memory based on N-doped Ge₂Sb₂Te₅ film with low resistance drift and ultrafast speed

Wei

et al. 2023

Chinese Phys. B

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Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed, scalable and non-volatile characteristics. However, the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change memory. Here, N doped Ge2Sb2Te5 based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation speed. The picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information readout. Results show that when N content is 27.4 at. %, N-doped Ge2Sb2Te5 film possesses high ten-year data retention temperature of 175 ℃ and low resistance drift coefficient of 0.00024 at 85 ℃, 0.00170 at 120 ℃, and 0.00249 at 150 ℃, respectively, owing to the formation of Ge-N, Sb-N and Te-N bonds. The SET/RESET operation speeds of the film reach 520 ps/13 ps. In parallel, the reversible switching cycle of corresponding device is realized with the resistance ratio of three orders of magnitude. Four-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift coefficients. Therefore, N doped Ge2Sb2Te5 thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.

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Screening (SbTe)1−xNMx Solid Solutions Towards to Phase-Change Memory Materials Applications: A High-Throughput Computational Study

Feng

Peng

Zhao

et al. 2023

J. Electron. Mater.

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Investigation of Ru-doped Sb2Te alloy for high-speed and good thermal stability phase change memory applications

Cited by 7 publications

References 11 publications

Phase-change behavior of RuSbTe thin film for photonic applications with amplitude-only modulation

Phase-change behavior of RuSbTe thin film for photonic applications with amplitude-only modulation

Multilevel optoelectronic hybrid memory based on N-doped Ge₂Sb₂Te₅ film with low resistance drift and ultrafast speed

Screening (SbTe)1−xNMx Solid Solutions Towards to Phase-Change Memory Materials Applications: A High-Throughput Computational Study

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Investigation of Ru-doped Sb2Te alloy for high-speed and good thermal stability phase change memory applications

Cited by 7 publications

References 11 publications

Phase-change behavior of RuSbTe thin film for photonic applications with amplitude-only modulation

Phase-change behavior of RuSbTe thin film for photonic applications with amplitude-only modulation

Multilevel optoelectronic hybrid memory based on N-doped Ge2Sb2Te5 film with low resistance drift and ultrafast speed

Screening (SbTe)1−xNMx Solid Solutions Towards to Phase-Change Memory Materials Applications: A High-Throughput Computational Study

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Multilevel optoelectronic hybrid memory based on N-doped Ge₂Sb₂Te₅ film with low resistance drift and ultrafast speed