Investigation of seeded vertical gradient freeze (VGF) growth of CdZnTe bulk crystals

Balbaşı, Özden Başar; Ünal, Mustafa; Genç, Ayşe Merve; Çelik, Gülçin; Parlak, M.; Turan, Raşit

doi:10.1016/j.jcrysgro.2022.126573

Cited by 4 publications

(2 citation statements)

References 7 publications

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“…In this installation, even despite the low growth rate of the VGF process, it was possible to implement a highly profitable industrial process [2]. However, these achievements are inextricably linked with an increase in the chemical purity of the starting material to a purity of 7-8N [3][4][5]. Semiconductor crystals of cadmium telluride (CdTe) and its solid solutions (CdxZn1-xTe) are the best materials for room-temperature X-ray and gamma-ray detection systems [6], which are widely used in medicine, security systems, and scientific technology.…”

Section: Introductionmentioning

confidence: 98%

Numerical Simulation of CdTe Crystal Growth by VGF Technique Assisted by Axial Low-Frequency Oscillations of the Melt

Nefedov,

Dovnarovich,

Kostikov

et al. 2023

Preprint

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The problem of intensification of melt crystal growth process has been analyzed using CdTe as an actual material. Numerical simulation of 100 mm diameter CdTe crystal growth by VGF technique has been carried out. The heat-mass transfer was controlled by introducing of low-frequency oscillating baffle into the melt, so called axial vibrational control (AVC) technique. The baffle configuration has been optimized to destroy solid «tails», which were formed near the crucible walls at high cooling rates due to the low thermoconductivity and the corresponding latent heat. Analysis of CdTe homogeneity range showed that during fast crystal cooling Te micro precipitations were formed resulting from decay of oversaturated Cd-riched nonstoichiometric solid solution at Bridgman crystal growth technique. A VGF grown CdTe crystal after full crystallization stays inside the phase field of the high temperature wurtzite polymorph. This makes it possible to go through the polymorph transition without Te micro-precipitating using the advantages of VGF specific feature of very slow cooling.

show abstract

Section: Introductionmentioning

confidence: 98%

Numerical Simulation of CdTe Crystal Growth by VGF Technique Assisted by Axial Low-Frequency Oscillations of the Melt

Nefedov,

Dovnarovich,

Kostikov

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…In this installation, despite the low growth rate of the VGF process, it was possible to implement a highly profitable industrial process [2]. However, these achievements are inextricably linked with an increase in the chemical purity of the starting material to a purity of 7-8N [3][4][5]. Semiconductor crystals of cadmium telluride (CdTe) and its solid solutions (CdxZn1-xTe) are the best materials for room-temperature X-ray and gamma-ray detection systems [7], which are widely used in medicine, security systems, and scientific technology.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of CdTe Crystal Growth Using the Vertical Gradient Freeze Technique Assisted by Axial Low-Frequency Oscillations of the Melt

Nefedov,

Dovnarovich,

Kostikov

et al. 2024

Crystals

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The problem of intensification of the melt crystal growth process has been analyzed using CdTe as an actual material. Numerical simulation of 100 mm diameter CdTe crystal growth using the VGF technique has been carried out. The heat–mass transfer was controlled by introducing low-frequency oscillating baffle into the melt, which is a so-called axial vibrational control (AVC) technique. The baffle configuration has been optimized to destroy solid “tails”, which were formed near the crucible walls at high cooling rates due to the low thermoconductivity and the corresponding latent heat. Analysis of CdTe homogeneity range showed that during fast crystal cooling, Te micro precipitations were formed, resulting from the decay of oversaturated Cd-rich nonstoichiometric solid solution during the Bridgman crystal growth technique. After full crystallization, a VGF-grown CdTe crystal stays inside the phase field of the high-temperature wurtzite polymorph. This makes it possible to go through the polymorph transition without Te micro-precipitating using the advantages of the VGF-specific feature of very slow cooling.

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Improved electrical properties of detector-grade Cd1−xZnxTe single crystals passivated by KMnO4 and K2S2O8

Yang

Sun

et al. 2023

Nuclear Instruments and Methods in Physics Research Section A:

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Investigation of seeded vertical gradient freeze (VGF) growth of CdZnTe bulk crystals

Cited by 4 publications

References 7 publications

Numerical Simulation of CdTe Crystal Growth by VGF Technique Assisted by Axial Low-Frequency Oscillations of the Melt

Numerical Simulation of CdTe Crystal Growth by VGF Technique Assisted by Axial Low-Frequency Oscillations of the Melt

Numerical Simulation of CdTe Crystal Growth Using the Vertical Gradient Freeze Technique Assisted by Axial Low-Frequency Oscillations of the Melt

Improved electrical properties of detector-grade Cd1−xZnxTe single crystals passivated by KMnO4 and K2S2O8

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