Investigation of selenization process of electrodeposited Cu–Zn–Sn precursor for Cu2ZnSnSe4 thin-film solar cells

Kondrotas, Rokas; Juškėnas, Remigijus; Naujokaitis, Arnas; Niaura, Gediminas; Mockus, Z.; Kanapeckaitė, S.; Čechavičius, Bronislovas; Juškevičius, Kęstutis; Saucedo, Edgardo; Sánchez, Yudania

doi:10.1016/j.tsf.2015.05.012

Cited by 7 publications

(3 citation statements)

References 27 publications

(14 reference statements)

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“…The slight differences between the PL peak positions can occur due to different compositions, which may lead to different tailing properties and other dominating defects. The PL spectra from the backside of each absorber show additionally a broad peak at around 1.2 eV, known as a ZnSe defect transition in literature [30,[33][34][35]. These results are in good agreement with SE and Raman results: All samples show clear evidence for the existence of ZnSe secondary phases at the back side of the absorber for both SE and Raman spectroscopy (see Table 1 and Section 3.2).…”

Section: Photoluminescence Resultssupporting

confidence: 78%

Optical properties of Cu_2ZnSnSe_4 thin films and identification of secondary phases by spectroscopic ellipsometry

Demircioğlu¹,

Salas²,

Rey³

et al. 2017

Opt. Express

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Abstract:We apply spectroscopic ellipsometry (SE) to identify secondary phases in Cu 2 ZnSnSe 4 (CZTSe) absorbers and to investigate the optical properties of CZTSe. A detailed optical model is used to extract the optical parameters, such as refractive index and extinction coefficient in order to extrapolate the band gap values of CZTSe samples, and to obtain information about the presence of secondary phases at the front and back sides of the samples. We show that SE can be used as a non-destructive method for detection of the secondary phases ZnSe and MoSe 2 and to extrapolate the band gap values of CZTSe phase.

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Section: Photoluminescence Resultssupporting

confidence: 78%

Optical properties of Cu_2ZnSnSe_4 thin films and identification of secondary phases by spectroscopic ellipsometry

Demircioğlu¹,

Salas²,

Rey³

et al. 2017

Opt. Express

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“…However, the copper deposited on the molybdenum sublayer had bad adhesion in this work. A similar behavior of electrochemically deposited copper on a molybdenum layer was observed in [21,22]. Therefore, nickel was used as a sublayer for copper [23] and as a top layer to prevent the loss of volatile tin during subsequent high-temperature annealing.…”

Section: Synthesis Of Thin Filmsmentioning

confidence: 81%

Morphology and Crystal Structure of Cu2NiSn(S,Se)4 Thin Films Obtained by an Electrodeposition-Annealing Process

et al. 2022

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Today, an actual task of photovoltaics is the search for new light-absorbing materials for solar cells, which will make them more efficient and economically affordable. Semiconductor Cu2NiSn(S,Se)4 (CNTSSe) thin films are promising materials due to suitable optical and electrical properties. This compound consists of abundant, inexpensive, and low-toxicity elements. However, few results of studying the properties of CNTSSe films have been presented in the literature. This paper presents the results of studying the morphology, phase composition, and crystal structure of the CNTSSe films, which were first obtained by high-temperature annealing of electrodeposited Ni/Cu/Sn/Ni precursors on glass/Mo substrates in chalcogen vapor. The films were studied using X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. It has been found that sequential electrochemical deposition makes it possible to obtain the Ni/Cu/Sn/Ni precursors of the required quality for further synthesis of the films. It is shown that high-temperature annealing in chalcogen vapor in air makes it possible to synthesize stable polycrystalline CNTSSe films. The obtained results confirm that the production of CNTSSe films is suitable for use in solar cells by the proposed method, which can be improved by more precise control of the precursor composition and annealing conditions.

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“…También se observan grietas en superficie, aunque son muy finas y aparentemente no suponen un problema para la continuidad de la capa. [195]. A 21,9º (2θ) también se ha indexado un pico correspondiente a la fase Se6, la cual ha podido formarse en superficie durante el tratamiento de selenización (JSPDS 089-1617).…”

Section: Caracterización De Las Capas Precursorasunclassified

Síntesis y deposición de semiconductores basados en Cu2ZnSn(S,Se)4 sobre laminados cerámicos para aplicaciones fotovoltaicas

Roures¹

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Investigation of selenization process of electrodeposited Cu–Zn–Sn precursor for Cu2ZnSnSe4 thin-film solar cells

Cited by 7 publications

References 27 publications

Optical properties of Cu_2ZnSnSe_4 thin films and identification of secondary phases by spectroscopic ellipsometry

Optical properties of Cu_2ZnSnSe_4 thin films and identification of secondary phases by spectroscopic ellipsometry

Morphology and Crystal Structure of Cu2NiSn(S,Se)4 Thin Films Obtained by an Electrodeposition-Annealing Process

Síntesis y deposición de semiconductores basados en Cu2ZnSn(S,Se)4 sobre laminados cerámicos para aplicaciones fotovoltaicas

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