Investigation of Si-doped p-type , quantum well infrared photodetectors and multiquantum wells grown on (3 1 1)A GaAs

Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy

“…The symmetrical I-V characteristics are due to the symmetry between the GaAs growth on AlGaAs and the growth in reverse sequence, as well as negligible Si dopant migration along the growth direction, whereas Be doping always encounters fast outdiffusion. 10 Since the dark current at low bias and relatively high temperatures is dominated by thermionic emission, 20 it follows the I͑T͒ / T ϰ exp͑−E ac / k B T͒ relationship. The activation energy E ac can be extracted from the slope of the plot of the normalized dark current ͑I d / T͒ versus the normalized inverse temperature 1000/ T in semilog scale as shown in Fig.…”

“…p-type Si-doped AlGaAs/ GaAs and AlGaAs/ InGaAs QWIPs grown on ͑311͒A substrates were reported and the dark current performance was compared with the Be-doped p-type QWIP grown on ͑100͒ substrate. 10 In this paper, we report the preparation of a GaAs/ AlGaAs QWIP structure on GaAs ͑111͒A substrate grown by molecular-beam epitaxy ͑MBE͒ technology with Si as p-type dopant. The crystal and optical properties, doping behavior, and intersubband absorption are studied, and finally the QWIP detector is fabricated and characterized.…”

Infrared absorption and current–voltage characteristic of GaAs/AlGaAs multiple quantum wells on GaAs (111)A substrate grown by solid source molecular beam epitaxy

“…2 for (1 1 1)A and (1 0 0) GaAs/AlGaAs QWIP diodes, respectively. The symmetrical I-V characteristics are due to the symmetry between the GaAs growth on AlGaAs and the growth in reverse sequence, as well as negligible Si dopant migration along the growth direction, whereas Be doping always encounters fast out diffusion [7]. Since the dark current at low bias and relatively high temperature is dominated by thermionic emission [14], which follows IðTÞ=T / exp ðÀE ac =k B TÞ, the activation energy E ac can be extracted from the slope of the plot of the normalized dark current (I d /T) versus the normalized inverse temperature 1000/T in semi-log scale and is given as a function of bias in Fig.…”

“…(1 1 1)-oriented p-type GaAs/AlGaAs quantum well infrared photodetector(QWIP) has been theoretically investigated by Tachee Cho et al [6] and its superior detectivity performance has also been predicted. A p-type AlGaAs/ GaAs and AlGaAs/InGaAs QWIP grown on (3 1 1)A substrate has been reported and its dark current performance has been compared with Be-doped p-type QWIP grown on (1 0 0) substrate [7].…”

Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (111)A substrate

“…The (1 1 1)-oriented p-type GaAs/AlGaAs quantum-well infrared photodetector (QWIP) was theoretically investigated by Cho et al [4], and the absorption coefficient, responsivity and detectivity were also estimated. p-type Si-doped AlGaAs/GaAs and AlGaAs/InGaAs QWIPs grown on (3 1 1)A substrates were reported and the dark current performance was compared with the Be-doped p-type QWIP grown on (1 0 0) substrate [5]. Due to more complicated valence band structure in (1 1 1) orientation, it is interesting to investigate the polarization response of p-type QWIPs on (1 1 1) oriented substrates.…”