Investigation of Si1−xGex films and SimGen superlattices by x-ray diffraction

Koschinski, W.; Dettmer, K.; Keßler, F. R.

doi:10.1063/1.351877

Cited by 18 publications

(3 citation statements)

References 22 publications

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“…This link leaves no voids but a series of dislocations that accommodate the misorientation between neighbouring blocks. The analysis of the mosaic structure, dimensions and orientation distribution, is often what people mean when they are interested in the crystal 'quality', for example Koschinski et al (1992) and Capper et al (1993). The analysis method applicable can be defined by the size and the instrument resolution.…”

Section: Determination Of Mosaic-block Dimensionsmentioning

confidence: 99%

X-ray analysis of thin films and multilayers

Fewster

1996

Rep. Prog. Phys.

135

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X-ray diffraction is sensitive to thin films of atomic dimensions to thicknesses of many tens of microns, by virtue of the x-ray wavelengths employed and the very high diffractionspace resolutions attainable. X-ray methods are generally non-destructive, in that sample preparation is not required, and they can provide a very appropriate route to obtain structural information on thin films and multilayers. Analysis can be performed across the whole spectrum of material types from perfect single crystals to amorphous materials. The choice of the x-ray diffraction analysis procedure depends on the quality of the structural form and therefore this review has been organized to reflect this. Following a description of the various material types, some typically important material parameters have been given arising from the application areas. These material parameters relating to the structure are then categorized into macroscopic and microscopic properties which can then be further subdivided and correlated to the most appropriate analysis method. It is clear from this that x-ray analysis covers the whole range and from this the recent developments will become clear. It is intended therefore that the reader is not compelled to read from beginning to end, but rather be able to find the structural parameter of interest to him/her in a simple way and from that discover the various approaches to its determination.

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Section: Determination Of Mosaic-block Dimensionsmentioning

confidence: 99%

X-ray analysis of thin films and multilayers

Fewster

1996

Rep. Prog. Phys.

135

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“…Si 1 - x Ge x alloys grown on Si substrates by CVD and molecular beam epitaxy (MBE) have been studied extensively using numerous techniques. − Some of the unique behavior observed for Si/Ge heterostructures is attributed to the 4% lattice mismatch between Si and Ge and the lower free energy of Ge surfaces relative to Si surfaces. Si 1 - x Ge x alloys have also been grown by photoassisted CVD (PCVD) using Ge 2 H 6 /Si 2 H 6 precursor gases and 193 nm laser pulses directed parallel to the surface at 548 K by Li et al The rate of Si 1 - x Ge x growth was accelerated compared to nonphotoassisted conditions.…”

Section: Introductionmentioning

confidence: 99%

Photoinduced Reaction of Digermane with Si(111)

Batinica

Crowell

1999

J. Phys. Chem. A

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The photoinduced reaction of digermane with the Si(111) surface using ultraviolet irradiation has been studied using temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES). Hydrogen and germane desorption yields and relative Ge/Si AES signals are used to determine the reactivity of digermane. UV irradiation during or after dosing of the Si crystal surface at low temperatures (e120 K) enhances the reactivity of digermane compared to similar doses without UV irradiation. Adsorption and photoexcitation of digermane at 110 K lead to significantly more reaction that at 120 K. We also find that UV irradiation after dosing the Si(111) surface with digermane enhances the reactivity more than simultaneous UV irradiation at 110 K, but the opposite is true at 120 K. Evidence is also found for precursor-mediated adsorption, and this is used to rationalize the dramatic changes with temperature. Photoexcitation of digermane at low temperatures leads initially to deposition of a-Ge:H.

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“…Several investigations of the lateral strain [12,13], as well as of the full-width at half maximum (FWHM) of X-ray diffractograms of SiGe buffer layers and superlattices (SL's) were reported so far using double crystal X-ray diffraction (DCD) [14,15]. Recently, for the analysis of complex multilayer stuctures the use of triple axis diffractometry :(TAD) has been introduced, which allows the determination of the two-dimensional intensity distribution around reciprocal lattice points (RELP's) [16].…”

Section: Introductionmentioning

confidence: 99%

High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

et al. 1993

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Double crystal and triple axis X-ray diffractometry was used to characterize the structural properties of Si/Si1-xGex multiquantum well samples grown pseudomorphically on Sí(001) substrates, as well as of short-period Si9 Ge6 superlattices grown by molecular beam epitaxy on rather thick step--graded Si1-xGex (0 < x < 0.4, 650 nm thick) buffers followed by 550 nm Si0.6 Ge0.4 layers. Reciprocal space maps around the (004) and (224) reciprocal lattice points yield direct information on tle strain status of the layers in the heterostructure systems and in particular on the amount of strain relaxation.

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Investigation of Si1−xGex films and SimGen superlattices by x-ray diffraction

Cited by 18 publications

References 22 publications

X-ray analysis of thin films and multilayers

X-ray analysis of thin films and multilayers

Photoinduced Reaction of Digermane with Si(111)

High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

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