2021
DOI: 10.1016/j.ejpb.2020.11.022
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Investigation of silicon nanoparticles produced by centrifuge chemical vapor deposition for applications in therapy and diagnostics

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Cited by 16 publications
(5 citation statements)
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“…The broad absorbance features of MPDA are also readily observed in MPDA–PsMME spectra [ 37 ]. As with the silica, the main absorbance bands of TCPSi, the Si–O and Si–C related vibrations near 1050–1100 cm −1 are highly visible in the TCPSi–PsMME nanoformulation [ 38 ].…”
Section: Resultsmentioning
confidence: 99%
“…The broad absorbance features of MPDA are also readily observed in MPDA–PsMME spectra [ 37 ]. As with the silica, the main absorbance bands of TCPSi, the Si–O and Si–C related vibrations near 1050–1100 cm −1 are highly visible in the TCPSi–PsMME nanoformulation [ 38 ].…”
Section: Resultsmentioning
confidence: 99%
“…5 Varying toxicity for different surface modifications of porous silicon materials has been documented. 20,44,45 Furthermore, depending on the administration route, extensive in vivo studies and clinical trials of an eventual final nanomedicine product are needed to guarantee clinical safety. 46…”
Section: Discussionmentioning
confidence: 99%
“…5 Varying toxicity for different surface modifications of porous silicon materials has been documented. 20,44,45 Furthermore, depending on the administration route, extensive in vivo studies and clinical trials of an eventual final nanomedicine product are needed to guarantee clinical safety. 46 The release rate of drugs from nanocarriers depends on several factors including the degradation rate of the carrier material, the surface area available for adsorption and dissolution, the drug solubility and the hydrophilic-lipophilic, electrostatic, or other interactions between the drug and carrier.…”
Section: Drug Deliverymentioning
confidence: 99%
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“…Many techniques have been used for the fabrication of Si NCs, the chemical vapor deposition (CVD), the annealing of Si rich oxide (SRO) layers or the implantation of Si in SiO2 layers. However, these techniques commonly produce NCs with crystalline defects and/or impurities (specially at the NCs/SiO2 interface), inhomogeneous size, low densities and imprecise positioning [15][16][17][18][19][20] which make them unsuitable for optoelectronic applications.…”
Section: Introductionmentioning
confidence: 99%