Investigation of Source-Based Scratch Formation During Oxide Chemical Mechanical Planarization

Kwon, Tae-Young; Cho, Byoung-Jun; Manivannan, R.; Busnaina, Ahmed; Park, Jin-Goo

doi:10.1007/s11249-012-0098-2

Cited by 14 publications

(6 citation statements)

References 18 publications

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“…Figure 27 shows FESEM images of fresh pad particles and pad debris generated using DI water and silica abrasive particles. Park's group [73] also investigated the scratch number using the three different scratch source (vis., pad debris, dried particles, and diamond particles) on scratch formation comprehensively with their classification. Figure 28 shows the material removal rate and generated scratch number as a function of scratch source.…”

Section: Pad Surface Properties and Pad Debrismentioning

confidence: 99%

“…However, the explanation of chatter mark scratch generation using only basic contact theory is not easy. Stick-slip phenomena between two sliding surfaces are commonly observed in a wide range of length scales from atomic to macroscopic [73,91,92]. Gao et al [92,93] developed an empirical equation describing the stick-slip friction as a function of humidity, speed, and applied load.…”

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confidence: 99%

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Scratch formation and its mechanism in chemical mechanical planarization (CMP)

2013

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Chemical mechanical planarization (CMP) has become one of the most critical processes in semiconductor device fabrication to achieve global planarization. To achieve an efficient global planarization for device node dimensions of less than 32 nm, a comprehensive understanding of the physical, chemical, and tribo-mechanical/chemical action at the interface between the pad and wafer in the presence of a slurry medium is essential. During the CMP process, some issues such as film delamination, scratching, dishing, erosion, and corrosion can generate defects which can adversely affect the yield and reliability. In this article, an overview of material removal mechanism of CMP process, investigation of the scratch formation behavior based on polishing process conditions and consumables, scratch formation mechanism and the scratch inspection tools were extensively reviewed. The advantages of adopting the filtration unit and the jet spraying of water to reduce the scratch formation have been reviewed. The current research trends in the scratch formation, based on modeling perspective were also discussed.

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Section: Pad Surface Properties and Pad Debrismentioning

confidence: 99%

mentioning

confidence: 99%

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

2013

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“…Among several kinds of scratches, multiple-line scratches caused by diamond particles are one of the most commonly observed during manufacturing [18]. As shown in figure 1, a binary map, these type of scratches comprise of many short broken segments.…”

Section: Introductionmentioning

confidence: 99%

Artificial intelligent matching for scratches of semiconductor wafers based on a K-NN algorithm

Pan

Yang

et al. 2019

Surf. Topogr.: Metrol. Prop.

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Scratches, those usually generated during polishing the silicon wafer surface, are one of the major yield loss factors in semiconductor manufacturing industry. In order to determine the source of the scratches in real time and reduce the yield loss, it is critical for manufacturers to match and identify the same type of scratches automatically. In this paper, an improved K nearest neighbors (KNN) algorithm to address this issue is presented. Firstly, a skeleton extraction method is used to depict the main lines of scratches. Then the clustering protocol is applied as a preliminary step to group these main lines so that some essential endpoints features of main lines, such as distance, slope and curvature, can be extracted. During feature extraction, a dynamic coordinate system is introduced and this greatly reduces the distortions arise due to the magnitude of tangent difference. An intelligent matching of similar scratches MSML-KNN algorithm is formulated. The experimental results show that the proposed matching method for wafer scratches has a good adaptability and robustness.

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“…On the other hand, as device nodes progress and the number of applications of CMP in semiconductor device manufacturing increases, defect control is becoming another key factor in CMP. [13][14][15] From this viewpoint, the development of a low-k Cu interconnect process is a challenge because low-k films 16,17) are fragile and easily peel off especially at the wafer edge portion. 18) Therefore, wafer edge pressure control by adjusting the retainer ring pressure is also considered important for preventing low-k film delamination.…”

Section: Introductionmentioning

confidence: 99%

New Model of Defect Formation Caused by Retainer Ring in Chemical Mechanical Polishing

Isobe

Komiyama

Kurokawa

2013

Jpn. J. Appl. Phys.

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Defect formation by retainer ring pressure in chemical mechanical polishing (CMP) was investigated. It was found that a higher retainer ring pressure causes more defects. The mechanism underlying this finding was considered to be the agglomeration of abrasive particles mixed with polished polymers from the retainer ring. Such agglomeration is accelerated by increasing the retainer ring pressure. This ring pressure exerts stress onto particles and also polishes the polymers from the ring. Lowering the retainer ring pressure and also changing the ring material from polymers, which are easy to polish, to tough materials are effective for minimizing the density of defects in CMP.

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Investigation of Source-Based Scratch Formation During Oxide Chemical Mechanical Planarization

Cited by 14 publications

References 18 publications

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

Artificial intelligent matching for scratches of semiconductor wafers based on a K-NN algorithm

New Model of Defect Formation Caused by Retainer Ring in Chemical Mechanical Polishing

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