Investigation of special features of parameters of Schottky barrier contacts caused by a nonlinear bias dependence of the barrier height

Abstract

Influence of the nonlinear bias dependence of the barrier height on measured Schottky-barrier contact parameters J. Appl. Phys. 109, 113718 (2011); 10.1063/1.3587233 Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneitiesObservation of quantized conductance in split-gate In 0.53 Ga 0.47 As/In 0.77 Ga 0.23 As/InP point contacts using Cr/Au p -InP Schottky barriers

The Ir-n-GaAs Schottky barrier contacts made by electrochemical deposition

“…17,18 But at the same time, there is a deviation from the calculated curve, which is the greater, the smaller the contact diameter: the dependence u b ðVÞ drops with decreasing diameter, instead of fitting the unified calculated curve (solid line), as in Ref. 12. The drop reaches 28 mV for a 5-lm contact (Fig.…”

“…12 for studying the electrochemical Au-n-GaAs contacts. This concept deals with the nonlinear dependence of the barrier height on the bias voltage as a fundamental cause of the known "anomalies" in the SB contact characteristics.…”

“…In this case, we have in mind not only the size effects (depending on the diameter) and the dependence of the IVCs parameters on the bias voltage discussed in this paper but also "the low temperature anomalies" of the IVCs also caused by the nonlinearity of the barrier height. [21][22][23][24][25] The calculation of the IVCs parameters (n, u bm , and u bI ) as a function of the bias voltage and the contact diameter is based on the model of the intimate contact (IC model) 12,23 in the presence of the subsurface electronic states distributed over energy and coordinate and interacting with the semiconductor. This model takes into account the tunneling and the image force effects.…”

“…The SSS parameters and the barrier height were determined by fitting the calculated and experimental IVCs, which is described in detail in Ref. 12.…”

“…According to Ref. 12, the effective barrier height determined at a given current (u bI ), the ideality factor n, and the measured barrier height u bm measured at the same current I are related to each other by the expression,…”