Investigation of Spin-on Dopants and Curing Temperature Effect on Dopant Activation

Abstract

Spin-on dopant technique has been investigated in the paper. The boron and phosphorus were used as p-and n-type dopant sources and were deposited on silicon substrates, followed by the baking process to evaporate the solvents from spin-on dopant layers. The standard drive-in process was applied to diffuse and activate the dopants. The curing temperature varied from 150 to 200 o C to investigate the temperature effect on dopant activation. It is suggested that for our selected spin-on dopant sources, the curing temperature and time of 175 o C and 60 minutes would lead to the best result of dopant activation during drive-in process, evidenced by the lowest sheet resistance, which was measured using four-point probe measurement method.

Investigation of Phosphorus Spin on Dopant on SOI Wafer

“…However, the sheet resistance is greater for the sample that was heated to 800°C for a period of 30 minutes as compared to the sample that was heated to 700 o C for a period of 120 minutes. This is because the soaking time for the 800°C sample was insufficient to activate more dopants despite the higher temperature [2]. At a thermal diffusion temperature of 900°C show a similar sheet resistance drops.…”

“…Furthermore, the elimination of high-energy dopant ions renders the SOD method non-destructive. In addition, the SOD method is simplified and accelerated due to the roomtemperature spinning process and the one-time utilization of the furnace [2]. In this research, we study the effect of thermal diffusion temperature and soaking time to the electrical properties of SOI wafer were conducted.…”