Investigation of Spin Voltaic Effect in a  p–n Heterojunction

Kondo, Tsuyoshi; Hayafuji, J.; Munekata, H.

doi:10.1143/jjap.45.l663

Cited by 29 publications

(27 citation statements)

References 12 publications

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“…As the traces of the resistance versus magnetic field, in different directions of the field indicate, there is spin-charge coupling due to the injected nonequilibrium spin in GaAs and the equilibrium magnetization in GaMnAs. Similar findings of the spin-voltaic effect were observed in p-InGaAs/n-AlGaAs spin-polarized p-n junctions (Kondo et al, 2006) in applied magnetic fields, using the g-factor differences of the n-and p-regions: AlGaAs composition was selected to have g ≈ 0, while InGaAs had g ≈ −1.9. In effect the p-region had a finite spin splitting, while the n-region could be considered to have zero equilibrium spin.…”

mentioning

confidence: 64%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

922

1,204

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Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry-giant magnetoresistance systems are used as hard disk read heads-semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field. 72.25.Rb, 75.50.Pp, PACS

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mentioning

confidence: 64%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

922

1,204

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“…The noncoplanar spin structure is responsible for the spin Berry phase γ s . We note that the SMF signals arising in a single material are driven by an AC magnetic field, in contrast to the spin voltaic effect 5,6 , which is realized in a junction system with the circularly polarized light. Recent experiments involving magnetic domain wall propagation, and magnetization reversal of nano-particles embedded in a magnetic tunnel junction have suggested the existence of the SMF 7,8 .…”

mentioning

confidence: 81%

Spin-motive force due to a gyrating magnetic vortex

et al. 2012

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A change of magnetic flux through a circuit induces an electromotive force. By analogy, a recently predicted force that results from the motion of non-uniform spin structures has been termed the spin-motive force. Although recent experiments seem to confirm its presence, a direct signature of the spin-motive force has remained elusive. Here we report the observation of a real-time spin-motive force produced by the gyration of a magnetic vortex core. We find a good agreement between the experimental results, theory and micromagnetic simulations, which taken as a whole provide strong evidence in favour of a spin-motive force.

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“…Here, β is a newly introduced parameter [6] to take into account the magnitude of backward flow; β ∼ 0 when the effective band discontinuity ∆E eff is large, β ≠ 0 when ∆E eff ∼ kT or smaller; and β ∼ 1 when ∆E eff is negative. Note that ∆I SVE ∝ I dark (V).…”

Section: Model Calculationmentioning

confidence: 99%

“…Magnetic circular dichroism (MCD) of each constituent layer also yields a photocurrent component which is dependent on circularly polarized light. We have also evaluated quantitatively the contribution of MCD (∆I MCD ) based on the conventional solar cell model [6,8]. Here, I = 1, 2, 3 represent an AlGaAs layer, an InGaAs layer, and a GaAs substrate, respectively.…”

Section: Model Calculationmentioning

confidence: 99%

Consideration and detection of spin‐dependent transport across semiconductor heterojunction

Hayafuji¹,

Kondo

Munekata

2006

Phys. Status Solidi (c)

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Theoretical and experimental examinations of spin transport across the p-n heterojunction are described. The analytical consideration reveals that the SVE is feasible when the appropriate heterostructure parameters are chosen, even if thermionic emission takes place across the heterojunction. Experimental data obtained from n-(Al,Ga)As/p-(In,Ga)As heterojunction diodes show that, under the forward bias condition, the circularly-polarized-light-dependent photocurrent component exhibits characteristic magnetic field dependence, which suggests the contribution of SVE.

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Investigation of Spin Voltaic Effect in a p–n Heterojunction

Cited by 29 publications

References 12 publications

Semiconductor spintronics

Semiconductor spintronics

Spin-motive force due to a gyrating magnetic vortex

Consideration and detection of spin‐dependent transport across semiconductor heterojunction

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