Investigation of sub-stoichiometric MoOx hole-selective contacts for rear junction passivating contact silicon solar cells

Kang, Dongkyun; Lee, Hae-Seok; Kim, Donghwan; Kang, Yoonmook

doi:10.1016/j.jsamd.2023.100647

Journal of Science: Advanced Materials and Devices

2024

DOI: 10.1016/j.jsamd.2023.100647

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Investigation of sub-stoichiometric MoOx hole-selective contacts for rear junction passivating contact silicon solar cells

Dongkyun Kang,

Hae-Seok Lee,

Donghwan Kim

et al.

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2024

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Cited by 2 publications

References 31 publications

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Enhanced Carrier Selectivity and Superior Passivation in Cost‐Effective Heterogeneous Hybrid Transport Layers for Next Generation Silicon Solar Cells

Kaur,

Sridharan,

Dutta

et al. 2024

Adv Funct Materials

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Hybrid hole transport layers (HHTLs) consisting of‐a low‐cost, low‐temperature, dopant‐free, organic, hole‐selective poly(3,4‐ethylenedioxythiophene):polystyrene sulphonate (PEDOT:PSS) and an inorganic homogenous tunnel oxides (HoTOs), such as SiOx, TiOx, and AlOx have allowed significant improvements in carrier selectivity as well as in power and cost efficiency. These key parameters can be further improved by introducing heterogeneous tunnel oxides (HeTOs), formed of two different inorganic oxides. This work examines the potential of heterogeneous HHTLs and their impact on passivation as well as on the interfacial properties in silicon solar cells. HeTOs of SiOx/TiOx and SiOx/AlOx with negative fixed charge are studied and optimized. A heterogeneous HHTL with AlOx (>1.5 nm) resulted in a high lifetime (1.2 ms), low surface recombination velocity, and improved surface band bending at the interface due to the presence of higher negative fixed charge (1012 cm−2) within these layers. The passivation properties further improved on light soaking and annealing due to oxidation of PSS and AlOx/SiOx. Overall, these HHTLs demonstrated a hole selectivity (S10) of 12.5 and very high efficiencies up to of 26.1%, surpassing homogenous‐SiOx/PEDOT:PSS by 1.4%.

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Enhanced Carrier Selectivity and Superior Passivation in Cost‐Effective Heterogeneous Hybrid Transport Layers for Next Generation Silicon Solar Cells

Kaur,

Sridharan,

Dutta

et al. 2024

Adv Funct Materials

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Effect of Conduction Band Tail of MoO_x on Transport Properties in MoO_x/SiO_x/c-Si Heterojunction

Li,

Hu,

Huang

2024

IEEE Trans. Electron Devices

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Investigation of sub-stoichiometric MoOx hole-selective contacts for rear junction passivating contact silicon solar cells

Cited by 2 publications

References 31 publications

Enhanced Carrier Selectivity and Superior Passivation in Cost‐Effective Heterogeneous Hybrid Transport Layers for Next Generation Silicon Solar Cells

Enhanced Carrier Selectivity and Superior Passivation in Cost‐Effective Heterogeneous Hybrid Transport Layers for Next Generation Silicon Solar Cells

Effect of Conduction Band Tail of MoO_x on Transport Properties in MoO_x/SiO_x/c-Si Heterojunction

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Investigation of sub-stoichiometric MoOx hole-selective contacts for rear junction passivating contact silicon solar cells

Cited by 2 publications

References 31 publications

Enhanced Carrier Selectivity and Superior Passivation in Cost‐Effective Heterogeneous Hybrid Transport Layers for Next Generation Silicon Solar Cells

Enhanced Carrier Selectivity and Superior Passivation in Cost‐Effective Heterogeneous Hybrid Transport Layers for Next Generation Silicon Solar Cells

Effect of Conduction Band Tail of MoOx on Transport Properties in MoOx/SiOx/c-Si Heterojunction

Contact Info

Product

Resources

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Effect of Conduction Band Tail of MoO_x on Transport Properties in MoO_x/SiO_x/c-Si Heterojunction