2018
DOI: 10.1016/j.sse.2017.09.017
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Investigation of surface PiN diodes for a novel reconfigurable antenna

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Cited by 8 publications
(2 citation statements)
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“…In designing of a solid-state plasma S-PIN diode, a critical consideration is whether the carrier concentration within the plasma region can reach 10 18 cm −3 under forward bias voltage. Several simulations and parameter optimizations have been conducted regarding the carrier concentration and I-V characteristics of the S-PIN diode structure [21][22][23][24][25]. Based on the research presented in these studies, it can be conclusively determined that highly resistive floating zone (FZ) silicon wafers are unsuitable for the fabrication of S-PIN diodes.…”
Section: Simulation and Analysis Of S-pin Diodesmentioning
confidence: 99%
“…In designing of a solid-state plasma S-PIN diode, a critical consideration is whether the carrier concentration within the plasma region can reach 10 18 cm −3 under forward bias voltage. Several simulations and parameter optimizations have been conducted regarding the carrier concentration and I-V characteristics of the S-PIN diode structure [21][22][23][24][25]. Based on the research presented in these studies, it can be conclusively determined that highly resistive floating zone (FZ) silicon wafers are unsuitable for the fabrication of S-PIN diodes.…”
Section: Simulation and Analysis Of S-pin Diodesmentioning
confidence: 99%
“…With the rapid development of the information technology and the continuous progress of the electronic reconnaissance means, there is a tremendous effort to dramatically change the antenna characteristics, such as dynamic reconfiguration and stealth [1,2]. The antenna with reconfigurable can be dynamically modified to enable different functions at different times, which increase their capabilities, expand their functionality, and widen their operating bandwidths [3,4,5].…”
Section: Introductionmentioning
confidence: 99%