Investigation of Temperature-Dependent Electrical Behavior and Trap Effect in AlGaN/GaN HEMT

Feng, FaMing; Chen, YiQiang; Xu, X. B.; Yu, Yongtao; Wang, Xiaoqiang; He, Jin; Li, Guoyuan

doi:10.1109/peac.2018.8590227

Cited by 3 publications

(2 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A new source and drain transient currents (I S and I D ) technique for a charge trapping characterization in AlGaN/GaN HEMTs, under normal device operation, has been developed. This proposed technique takes into account the device operating temperature variation during the transient measurements, a cost-effective complement to the temperature-dependent current-transient based techniques [6], [9], [23], [31]- [34]. It can be easily implemented to decouple the slow bulk charge traps and the surface traps from self-heating effects without turning to device simulations or to more complicated measurements.…”

Section: Discussionmentioning

confidence: 99%

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

Duffy

Benbakhti

Zhang

et al. 2020

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a normal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (I S ) and drain (I D ) transient currents for the first time. Two types of charge trapping mechanisms are identified: (i) bulk charge trapping occurring on a time scale of less than 1 ms, followed by (ii) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between I S and I D , a bulk charge trapping time constant is found to be independent of both drain (V DS ) and gate (V GS ) biases. Surface charge trapping is found to have a much greater impact on a slow degradation when compared to bulk trapping and self-heating. At a short timescale (< 1 ms), the RF performance is mainly restricted by both bulk charge trapping and self-heating effects. However, at a longer time (> 1 ms), the dynamic ON resistance degradation is predominantly limited by surface charge trapping.

show abstract

Section: Discussionmentioning

confidence: 99%

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

Duffy

Benbakhti

Zhang

et al. 2020

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…Combined with Figures 6 and 7, or analysis, the breakdown occurs in the AlGaAs/InGaAs heterojunction and Schottky junction, the gate becomes a high-voltage terminal, and the drain becomes a low-voltage terminal, causing a gradual decrease in output current. In addition, as the carrier mobility lowers, the transconductance G m also decreases, leading to a lessening of gate control capability [27], as shown in Figure 10. Thus, the gain of the device decreases due to the positive correlation with transconductance G m , so the phenomenon of gain compression emerges, as shown in Figure 11.…”

Section: Uwb Emp Failure Mechanism Analysismentioning

confidence: 99%

Failure Mechanism of pHEMT in Navigation LNA under UWB EMP

Chen

et al. 2022

Micromachines

View full text Add to dashboard Cite

With the development of microelectronic technology, the integration of electronic systems is increasing continuously. Electronic systems are becoming more and more sensitive to external electromagnetic environments. Therefore, to improve the robustness of radio frequency (RF) microwave circuits, it is crucial to study the reliability of semiconductor devices. In this paper, the temporary failure mechanism of a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) in a navigation low-noise amplifier (LNA) under the jamming of ultra-wideband (UWB) electromagnetic pulses (EMP) is investigated. The failure process and failure mechanism of pHEMT under UWB EMP are elaborated by analyzing the internal electric field, current density, and temperature distribution. In detail, as the amplitude of UWB EMP increases, the output current, carrier mobility, and transconductance of pHEMT decrease, eventually resulting in gain compression. The injection experiment on LNA, which effectively verified the failure mechanism, indicates that the gain of pHEMT is suppressed instantaneously under the jamming of UWB EMP and the navigation signal cannot be effectively amplified. When UWB EMP amplitude increases to nearly 10 V, the BeiDou Navigation Satellite System (BDS) carrier signal is suppressed by nearly 600 ns. Experimental results accord well with the simulation of our model. UWB EMP jamming is a new and efficient type of electromagnetic attack system based on the device saturation effect. The performance degradation and failure mechanism analysis contribute to RF reinforcement design.

show abstract

Influence of Temperature on p-GaN HEMT for High Power Application

Ninita

Pon

et al. 2020

2020 5th International Conference on Devices, Circuits and Systems (ICDCS)

View full text Add to dashboard Cite

Investigation of Temperature-Dependent Electrical Behavior and Trap Effect in AlGaN/GaN HEMT

Cited by 3 publications

References 22 publications

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs

Failure Mechanism of pHEMT in Navigation LNA under UWB EMP

Influence of Temperature on p-GaN HEMT for High Power Application

Contact Info

Product

Resources

About