Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs

Abstract

The temperature dependence of high-frequency noise characteristics for deep-submicrometer bulk and silicon-oninsulator (SOI) MOSFETs has been experimentally examined in this paper. With the downscaling of the channel length, our paper indicates that the power spectral density of the channel noise (S id ) of the bulk MOSFET becomes less sensitive to temperature due to the smaller degradation of the channel conductance at zero drain bias g d0 as temperature rises. We also show that the SOI-specific floating-body and self-heating effects would result in higher white-noise gamma factor. Finally, for both the bulk and SOI MOSFETs, since transconductance g m significantly decreases as temperature increases, their minimum noise figure NF min and equivalent noise resistance R n would degrade with increasing temperature.

A Small-Signal Analysis Based Thermal Noise Modeling Method for Rf Soi Mosfets

“…As the small-signal equivalent circuit already describes the linear two-port characteristics, the total drain-current noise S id , total gate-current noise S ig and their cross-correlation S igid * are required, and the noise performance of any noisy two-port network can be represented by Eq. (15).…”

“…For the applications in low noise CMOS RF circuits such as low noise amplifier (LNA), accurate modeling of noise is quite important. In the past decade, HF noise characterization and modeling for bulk and floating body SOI MOSFETs has been widely studied [6][7][8][9][10][11][12][13][14][15], and some modeling methods have been proposed. In [16], the authors proposed a channel segmentation model for accurate channel noise by several independent MOS model.…”

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

“…There are more high-temperature thermal noises, electromagnetic noises and other interference factors than in conventional application environments [ 6 ]; therefore, more consideration should be given to improving the signal-to-noise ratio (SNR) among the sensor optimization measures [ 7 ]. However, signal interference is inevitable over long distances, especially for the signal output of piezoresistive pressure sensors, which usually has a small output range (from tens to hundreds of millivolts).…”