Investigation of Temperature Distribution in SIC Power Module Prototype in Transient Conditions

Olanrewaju, Olufisayo; Yang, Zineng; Evans, Nathan; Fayyaz, Asad; Lagier, Thomas; Castellazzi, Alberto

doi:10.1109/pee.2019.8923270

Cited by 4 publications

(2 citation statements)

References 7 publications

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“…For the rest of the power module structure (from chip to heatsink), the temperature would be lower than the chip in steady state as one goes further away from chip [51], [52]. The components closer to the chip would be subjected to much higher temperature during OCs while the components further away from the chip would not be affected until a few milliseconds and would be at almost the same temperature as the pre fault value [53], [54].…”

Section: Challenges For Oc: Packaging Materialsmentioning

confidence: 99%

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Bhadoria

Dijkhuizen

Raj

et al. 2023

IEEE Trans. Power Electron.

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With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technologies for the over-current performance of SiC power modules in power electronics converters. It presents the limitations produced at the power module level by packaging materials which include semiconductor chips, substrates, metallization, bonding techniques, die attach, and encapsulation materials. Specifically, technologies for over-current related temperatures in excess of 200 • C are discussed. The paper also discusses potential technologies which have been proven or may be potential candidates for improving the safe operating area. The discussed technologies are use of phase change materials below the semiconductor chip, Peltier elements, new layouts of the power modules, control and modulation techniques for converters. Special attention has been given to an overview of various potential phase change materials which can be considered for high-temperature operations.

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Section: Challenges For Oc: Packaging Materialsmentioning

confidence: 99%

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Bhadoria

Dijkhuizen

Raj

et al. 2023

IEEE Trans. Power Electron.

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“…Multiple techniques have been developed to measure or to estimate the junction temperature of power semiconductors. The direct measurement of junction temperature is possible with optical methods [7]- [9], but these are hardly implementable on board of converters for reasons of cost and reduction of reliability. A thermistor placed in direct contact with the semiconductor die provides a delayed and attenuated image of the junction temperature [10], besides once again deteriorating the converter's reliability (i.e.…”

Section: Introductionmentioning

confidence: 99%

Coordinated Online Junction Temperature Estimation of MOSFETs and Antiparallel Diodes in Three-Phase SiC Inverters

Stella,

Pellegrino,

Armando

2023

IEEE J. Emerg. Sel. Topics Power Electron.

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SiC power MOSFETs guarantee high power density and high efficiency in new generation power converters. The precise measurement of the devices junction temperature is important in this context for guaranteeing the reliability of the converter and the full exploitation of power semiconductors. While the use of Temperature Sensitive Electrical Parameters (TSEPs) has proven effective and feasible, their application in realworld power converters remains limited. Besides SiC MOSFETs, the temperature of the antiparallel diode is often overlooked and considered non critical. However, monitoring the temperature of all power electronic devices, diodes included, offers augmented reliability, adaptive adjustment of the converter's peak current at no risk of failure and advanced diagnostics. This paper shows that the on-board measurement of the conduction voltage of the SiC MOSFETs and antiparallel diodes can be used for the direct estimate of the respective junction temperatures in a 3-phase voltage source inverter. The diode temperatures come with no hardware complication, with respect to what is already in place for SiC MOSFETs characterization and estimate. The proposed methodology is validated on a proof-of-concept 2-level 3-phase inverter designed for the Formula SAE student electric competitions, showing the temperature estimate of the six MOSFETs and diodes at overload current operation.

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Self-Calibration Technique for Junction Temperature Estimation of SiC MOSFET Inverters Loaded with Synchronous Reluctance Motors

Pescetto

Stella

Pellegrino

2023

2023 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Investigation of Temperature Distribution in SIC Power Module Prototype in Transient Conditions

Cited by 4 publications

References 7 publications

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Coordinated Online Junction Temperature Estimation of MOSFETs and Antiparallel Diodes in Three-Phase SiC Inverters

Self-Calibration Technique for Junction Temperature Estimation of SiC MOSFET Inverters Loaded with Synchronous Reluctance Motors

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